Effect of Electron Leakage on Efficiency Droop in Wide-Well InGaN-Based Light-Emitting Diodes

被引：29
作者：
Chang, Liann-Be
Lai, Mu-Jen
Lin, Ray-Ming [1 ]
Huang, Chou-Hsiung
机构：
[1] Chang Gung Univ, Grad Inst Elect Engn, Tao Yuan 333, Taiwan
来源：
APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 01期
关键词：
QUANTUM EFFICIENCY; LEDS;
D O I：
10.1143/APEX.4.012106
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Efficiency droop in wide-well InGaN double-heterostructure light-emitting diodes (LEDs) has been investigated by inserting an extra InGaN quantum well into the p-type side as the electron leakage test structure. The LED with a test structure exhibits an improvement of efficiency droop in the measurement range of 83.4 to 521 A/cm(2). These results suggest that the electron leakage significantly decreases the peak external quantum efficiency and shifts the start point of efficiency drop to a higher current density. Additionally, the hole injection efficiency probably dominates the mechanism of efficiency droop rather than electron leakage in the wide-well InGaN DH LEDs. (C) 2011 The Japan Society of Applied Physics
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页数：3
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