Fabrication and characterization of HfC coated Si field emitter arrays

被引:46
作者
Sato, T
Yamamoto, S
Nagao, M
Matsukawa, T
Kanemaru, S
Itoh, J
机构
[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan
[2] Natl Inst AIST, Tsukuba, Ibaraki 3058568, Japan
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2003年 / 21卷 / 04期
关键词
D O I
10.1116/1.1569933
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We fabricated hafnium carbide (HfC) coated Si field emitter arrays (HfC FEAs) with an extraction-gate electrode to improve the emission characteristics of Si FEAs. Hafnium carbide thin film was deposited by inductively coupled plasma-assisted magnetron sputtering. The HfC film was characterized by x-ray photoelectron spectroscopy and x-ray diffraction measurement, and was found to be (111)-oriented polycrystalline film. The HfC FEAs exhibited superior performance. An emission of more than 10 mA could be obtained from the 16 000 tip array, which is 20 times higher than that for Si FEAs. The operational voltage for emission of muA decreased from 61 to 45 V due to the HfC coating. The long-term emission characteristics were also measured. Si FEAs degraded rapidly even in an ultrahigh vacuum chamber. However, the emission degradation in the HfC FEAs was much slower. The number of active tips was counted using an electrostatic-lens projector, and the results revealed that the HfC FEAs had six times as many tips as the Si FEAs had. (C) 2003 American Vacuum Society.
引用
收藏
页码:1589 / 1593
页数:5
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