Investigation of High- and Low-κ Gate Dielectrics in Tuning of Graphene-Loaded THz Antennas

被引：0

作者：

Hekmati, Reza ^{[1
]}

Fard, Hassan Ghafoori ^{[1
]}

Neshat, Mohammad ^{[2
]}

Fathipour, Morteza ^{[2
]}

机构：

[1] Amirkabir Univ Technol, Dept Elect Engn, Tehran, Iran

[2] Univ Tehran, Sch Elect & Comp Engn, Tehran, Iran

来源：

2015 23RD IRANIAN CONFERENCE ON ELECTRICAL ENGINEERING (ICEE) | 2015年

关键词：

Antenna; Bandwidth; Gate dielectric; Graphene; Terahertz; Tuning;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of low- and high-kappa gate dielectrics and their thickness on tuning of graphene-loaded THz antennas are studied. According to our study, SiO2 provides higher tuning range for a resonance frequency as compared to Al2O3. For the particular antenna considered in this study, as thickness of SiO2 is decreased tuning range changed between 190 to 320 GHz. This amount for Al2O3 is 190 to 220 GHz. Based on our results, decreasing the thickness of SiO2 can increase the bandwidth more than 68 percent. Thickness variation of Al2O3 could enhance bandwidth around 17 percent. In both gate dielectrics, higher parallel resonance frequency is achieved by lower dielectric thickness.

引用

页码：1098 / 1102

页数：5

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