Thermal annealing of AuPt Schottky contacts on GaAs and AlGaAs

被引：2

作者：

Machác, P ^{[1
]}

机构：

[1] Inst Chem Technol, Dept Solid State Engn, CR-16628 Prague 6, Czech Republic

来源：

ASDAM 2000: THIRD INTERNATIONAL EUROCONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS - CONFERENCE PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/ASDAM.2000.889469

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The thermal stability of AuPt Schottky contacts on n-GaAs and n-AlGaAs epitaxial layers is investigated. The thermal treatment has been carried out by RTA apparatus for 45 s up to 615 degreesC. The AuPt Schottky contacts on GaAs are found to remain thermally stable after annealing up to 520 degreesC, the optimal parameters have been obtained at 415 degreesC. The present example shows the possibility to use the Schottky contacts as MSM photodetectors with the sensitivity of 1.7 A/W. The AuPt metallization at the AlGaAs wafers has shown poor parameters.

引用

页码：143 / 146

页数：4

共 6 条

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