Slingshot Nonsequential Double Ionization as a Gate to Anticorrelated Two-Electron Escape

被引：27

作者：

Katsoulis, G. P. ^{[1
]}

Hadjipittas, A. ^{[1
]}

Bergues, B. ^{[2
,3
]}

Kling, M. F. ^{[2
,3
]}

Emmanouilidou, A. ^{[1
]}

机构：

[1] UCL, Dept Phys & Astron, Gower St, London WC1E 6BT, England

[2] Ludwig Maximilians Univ Munchen, Dept Phys, Coulombwall 1, D-85748 Garching, Germany

[3] Max Planck Inst Quantum Opt, Hans Kopfermann Str 1, D-85748 Garching, Germany

来源：

PHYSICAL REVIEW LETTERS | 2018年 / 121卷 / 26期

基金：

英国工程与自然科学研究理事会; 欧洲研究理事会;

关键词：

MULTIPLE IONIZATION; ATOMS; SPECTRA;

D O I：

10.1103/PhysRevLett.121.263203

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

At intensities below the recollision threshold, we show that recollision-induced excitation with one electron escaping fast after recollision and the other electron escaping with a time delay via a Coulomb slingshot motion is one of the most important mechanisms of nonsequential double ionization (NSDI), for strongly driven He at 400 nm. Slingshot NSDI is a general mechanism present for a wide range of low intensities and pulse durations. Anticorrelated two-electron escape is its striking hallmark. This mechanism offers an alternative explanation of anticorrelated two-electron escape obtained in previous studies.

引用

页数：6

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