Gradient free sol-gel Pb(Zrx,Ti1-x)O3 thin films

被引：1
|
作者：
Calame, F. [1 ]
Muralt, P. [1 ]
机构：
[1] Ecole Polytech Fed Lausanne, Ceram Lab, CH-1015 Lausanne, Switzerland
来源：
2007 SIXTEENTH IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2 | 2007年
关键词：
D O I：
10.1109/ISAF.2007.4393173
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Pb(Zr-x,Ti1-x)O-3 thin films of homogeneous composition were synthesized by means of a modified sol-gel route on Pt(111)/TiOx/SiO2/Si substrates. The usually observed gradient in B-site composition could be reduced from +/- 12 to +/- 12.5 at% amplitude in Zr concentration fluctuations. The obtained 2 pin thick, dense and crack free films exhibited a {100}-texture index of 98.4%. Grain diameters increased at the same time by 50%. Dielectric and piezoelectric properties were remarkably improved. The relative dielectric constant epsilon(33f) was obtained as 1620, and the remanent transverse piezoelectric coefficient e(31f) was measured as -17.7 C/m(2).
引用
收藏
页码：80 / 82
页数：3
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