Fabrication and comparative optical characterization of n-ZnO nanostructures (nanowalls, nanorods, nanoflowers and nanotubes)/p-GaN white-light-emitting diodes

被引：59
作者：
Alvi, N. H. [1 ]
Ali, S. M. Usman [1 ]
Hussain, S. [1 ]
Nur, O. [1 ]
Willander, M. [1 ]
机构：
[1] Linkoping Univ, Dept Sci & Technol ITN, SE-60174 Norrkoping, Sweden
来源：
SCRIPTA MATERIALIA | 2011年 / 64卷 / 08期
关键词：
Zinc oxide; Nanostructure; Aqueous chemical growth; Optical properties; Heterojunctions; ZINC-OXIDE; FIELD-EMISSION; THIN-FILMS; NANOWIRES; EFFICIENCY; TEMPERATURE; SENSORS; GROWTH; ARRAYS; OXYGEN;
D O I：
10.1016/j.scriptamat.2010.11.046
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
White light-emitting diodes (LED) based on ZnO (nanowalls, nanorods, nanoflowers and nanotubes)/p-GaN were fabricated and their electrical, optical and electro-optical characteristics were comparatively characterized. All the LED showed rectifying behavior. The nanowalls and nanorods structures have the highest photoluminescence emission intensity in the visible and UV (at 3.29 eV) regions, respectively. The nanowalls have the highest color rendering index, with a value of 95, and the highest electroluminescence intensity with peaks approximately centered at 420, 450 nm and broad peak covering the visible region. (C) 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：697 / 700
页数：4
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