A study of microstructural and optical properties of nanocrystalline ceria thin films prepared by pulsed laser deposition

被引:67
作者
Balakrishnan, G. [2 ,3 ]
Sundari, S. Tripura [4 ]
Kuppusami, P. [1 ]
Mohan, P. Chandra [5 ]
Srinivasan, M. P. [5 ]
Mohandas, E. [1 ]
Ganesan, V. [6 ]
Sastikumar, D. [2 ]
机构
[1] Indira Gandhi Ctr Atom Res, Div Phys Met, Kalpakkam 603102, Tamil Nadu, India
[2] Natl Inst Technol, Dept Phys, Tiruchirappalli 620015, Tamil Nadu, India
[3] PERI Inst Technol, Dept Phys, Madras 600048, Tamil Nadu, India
[4] Indira Gandhi Ctr Atom Res, Surface & Nanosci Div, Kalpakkam 603102, Tamil Nadu, India
[5] BARCF, Water & Steam Chem Div, Kalpakkam 603102, Tamil Nadu, India
[6] UGC DAE Consortium Sci Res, Indore 452017, Madhya Pradesh, India
关键词
X-ray diffraction; Thin films; Cerium oxide; Pulsed laser deposition; Ellipsometry; CHEMICAL-VAPOR-DEPOSITION; CEO2; FILMS; SUBSTRATE-TEMPERATURE; OXIDE; GROWTH; LAYERS; ORIENTATION; SCATTERING; CORROSION; COATINGS;
D O I
10.1016/j.tsf.2010.12.013
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thin films of cerium oxide (CeO2) have been deposited on (100) Si substrates using pulsed laser deposition technique at various substrate temperatures from room temperature (RT) to 973 K at an optimized oxygen partial pressure of 3 Pa. Structural, morphological and optical properties have been carried out using X-ray diffraction (XRD), Raman, ellipsometry and atomic force microscopy techniques. XRD results showed that the deposited films are polycrystalline with cubic structure. At room temperature, the film showed preferred orientation along (111) plane, while at higher temperatures, it exhibited preferred orientation along (200). The crystallite sizes were calculated and were found to be in the range 17-52 nm. The texture coefficient for (200) reflection increased until 573 K, and then decreased in the temperature range 673-973 K. The Raman peak appeared at 463 cm(-1) due to the F-2g active mode also confirmed the formation of CeO2 with a cubic structure. There was a systematic variation in the Raman peak intensity, frequency shift and line broadening with the increase of temperature. The ellipsometry studies showed that the refractive index and band gap increased from 2.2 to 2.6 and 3.4 to 3.6 eV, respectively with increasing substrate temperature from RT to 973 K. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:2520 / 2526
页数:7
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