High-Sensitivity Sensor Using C60-Single Molecule Transistor

被引:14
作者
Nasri, Abdelghaffar [1 ]
Boubaker, Aimen [1 ]
Hafsi, Bilel [2 ,3 ]
Khaldi, Wassim [1 ]
Kalboussi, Adel [1 ]
机构
[1] Univ Monastir, Fac Sci Monastir, Microelect & Instrumentat Lab, Monastir 5019, Tunisia
[2] Univ Valenciennes & Hainaut Cambresis, ISEN, Cent Lille, CNRS, F-59300 Famars, France
[3] Lille Univ Sci & Technol, UMR 8520, IEMN, F-59000 Villeneuve Dascq, France
关键词
Gas sensor; selectivity; sensitivity; single molecule transistor; organic semiconductors; fullerene; quantum molecular devices; SINGLE-ELECTRON TRANSISTOR; LOGIC GATES; GAS; DESIGN; CONDUCTANCE; BIOSENSORS; DIODES; CARBON; FILMS; NO2;
D O I
10.1109/JSEN.2017.2769803
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we use the Extended Huckel Theory coupled with a non-equilibrium green function to calculate the transport proprieties of molecular single electron transistor (MSET). We present the effect of electrode materials on the transport properties in an MSET using a Fullerene (C-60) molecule. The operation and performance of this MSET as a gas sensor are studied for the first time using a Fullerene as sensing material. The MSET sensors exhibited a change in the electric characteristic when the sensors were exposed to different gases. The favorable NH3 response characteristics of the MSET sensors were observed from the change in the drain-source current as a function of voltage, when the sensors were exposed to various NH3 concentrations ranging from 40 to 200 ppb. A satisfactory selectivity and remarkable high sensitivity have been found. The present results make our MSET as a very powerful candidate for use in gas sensing/measuring instrument, which allows the detection of toxic gas at low concentration.
引用
收藏
页码:248 / 254
页数:7
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