Through-Silicon-Via Management during 3D Physical Design: When to Add and How Many?

被引:37
作者
Pathak, Mohit [1 ]
Lee, Young-Joon [1 ]
Moon, Thomas [1 ]
Lim, Sung Kyu [1 ]
机构
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
来源
2010 IEEE AND ACM INTERNATIONAL CONFERENCE ON COMPUTER-AIDED DESIGN (ICCAD) | 2010年
关键词
D O I
10.1109/ICCAD.2010.5653703
中图分类号
TP301 [理论、方法];
学科分类号
081202 ;
摘要
In 3D integrated circuits through silicon vias (TSVs) are used to connect different dies stacked on top of each other. These TSV occupy silicon area and have significantly larger area than regular gates. In this paper, we address two critical aspects of TSV management in 3D designs. First, we address the problem of how many TSVs to add in a design. Since TSVs occupy significant silicon area, a general tendency has been to use a minimum number of TSVs in 3D circuits. We show that such an approach does not give us the best possible result. Second, we address the problem of TSV insertion. Because TSVs occupy silicon area, their location is decided during the placement stage of 3D design. However, we show that this is not the best possible stage for TSV insertion. We propose a change in the physical design flow for 3D integrated circuits to address the limitations of existing TSV placement methodology. All our algorithms are integrated with commercial tools, and our results are validated based on actual GDSII layouts. Our experimental results show the effectiveness of our methods.
引用
收藏
页码:387 / 394
页数:8
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