Effects of 50 MeV Si ion irradiation on nonlinear optical benzimidazole single crystals

被引：16

作者：

Kanagasekaran, T. ^{[1
]}

Mythili, P. ^{[1
]}

Srinivasan, P. ^{[1
]}

Vijayan, N. ^{[2
]}

Bhagavannarayana, G. ^{[2
]}

Kulriya, P. K. ^{[3
]}

Kanjilal, D. ^{[3
]}

Gopalakrishnan, R. ^{[1
]}

Ramasamy, P. ^{[4
]}

机构：

[1] Anna Univ, Dept Phys, Madras 600025, Tamil Nadu, India

[2] Natl Phys Lab, Mat Characterizat Div, New Delhi 110012, India

[3] Inter Univ Accelerator Ctr, New Delhi 110067, India

[4] SSN Coll Engn, Kalavakkam 603110, India

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 2007年 / 42卷 / 12期

关键词：

ion irradiation; dielectric properties; absorption coefficient; mechanical properties; solids;

D O I：

10.1002/crat.200711035

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The 50 MeV Si7+ ion irradiation induced modifications on structural, dielectric, optical and mechanical properties of Vertical Bridgman grown benzimidazole (BMZ) crystals were studied. The high resolution Xray diffraction studies show the quality of as grown BMZ and irradiated BMZ crystals. The dielectric constant and dielectric loss as a function of frequency and temperature was studied in detail. The ion induced mechanical behaviour of both as grown BMZ and irradiated BMZ crystals has been explained with the indentation effects using Vickers microhardness tester. UV-VIS. studies reveal the decrease in bandgap values and defects on irradiation. The above results are discussed in detail. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1376 / 1381

页数：6

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