Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD

被引：4

作者：

Liang, F. ^{[1
]}

Chen, P. ^{[1
]}

Zhao, D. G. ^{[1
]}

Jiang, D. S. ^{[1
]}

Zhao, Z. J. ^{[2
]}

Liu, Z. S. ^{[1
]}

Zhu, J. J. ^{[1
]}

Yang, J. ^{[1
]}

Liu, W. ^{[1
]}

He, X. G. ^{[1
]}

Li, X. J. ^{[1
]}

Li, X. ^{[1
]}

Liu, S. T. ^{[1
]}

Yang, H. ^{[3
]}

Liu, J. P. ^{[3
]}

Zhang, L. Q. ^{[3
]}

Zhang, Y. T. ^{[4
]}

Du, G. T. ^{[4
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Inst Chem, Ctr Physicochem Anal & Measurement, Beijing 100190, Peoples R China

[3] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China

[4] Jilin Univ, State Key Lab Integrated Optoelect, Coll Elect Sci & Engn, Changchun 130023, Peoples R China

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2016年 / 122卷 / 09期

基金：

中国国家自然科学基金;

关键词：

NEGATIVE-ELECTRON-AFFINITY; RAY PHOTOEMISSION SPECTROSCOPY; SI-DOPED ALN; ALUMINUM NITRIDE; UNINTENTIONAL INCORPORATION; DISPLAY STRUCTURE; EPITAXIAL-GROWTH; FIELD-EMISSION; XPS ANALYSIS; THIN-FILMS;

D O I：

10.1007/s00339-016-0312-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoelectron spectroscopy has been employed to analyze the content and chemical states of the elements on the surface of AlN films with different thickness, which are synthesized by metalorganic chemical vapor deposition on the n-type SiC substrates under low pressure. It is found that, besides the carbon and gallium on the AlN surface, the atom percentage of surface oxygen increases from 4.9 to 8.4, and the electron affinity also increases from 0.36 to 0.97 eV, when the thickness of AlN films increase from 50 to 400 nm. Furthermore, accompanying with the high-resolution XPS spectra of the O 1s, it is speculated that surface oxygen may be the major influence on the electron affinity, where the surface oxygen changes the surface chemical states through replacing N to form Al-O bond and Ga-O bond, although there are also a few of Ga and C contaminations in the chemical sate of Ga-O and C-C, respectively.

引用

页数：7

共 45 条

[1] Effect of polishing parameters on abrasive free chemical mechanical planarization of semi-polar (11(2)over-bar2) aluminum nitride surface [J].

Asghar, Khushnuma ;

Das, D. .

JOURNAL OF SEMICONDUCTORS, 2016, 37 (03)

[2] OBSERVATION OF A NEGATIVE ELECTRON-AFFINITY FOR HETEROEPITAXIAL ALN ON ALPHA(6H)-SIC(0001) [J].

BENJAMIN, MC ;

WANG, C ;

DAVIS, RF ;

NEMANICH, RJ .

APPLIED PHYSICS LETTERS, 1994, 64 (24) :3288-3290

[3] Study of oxygen chemisorption on the GaN(0001)-(1x1) surface [J].

Bermudez, VM .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (02) :1190-1200

[4] Investigation of chemical etching of AlN film with different textures by x-ray photoelectron spectroscopy [J].

Chen, Da ;

Xu, Dong ;

Wang, Jingjing ;

Zhang, Yafei .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 41 (23)

[5] Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth, part I: Growth of AlInN on AlN and effects of prior coating [J].

Choi, Suk ;

Kim, Hee Jin ;

Lochner, Zachary ;

Kim, Jeomoh ;

Dupuis, Russell D. ;

Fischer, Alec M. ;

Juday, Reid ;

Huang, Yu ;

Li, Ti ;

Huang, Jingyi Y. ;

Ponce, Fernando A. ;

Ryou, Jae-Hyun .

JOURNAL OF CRYSTAL GROWTH, 2014, 388 :137-142

[6] AlxGa1-xN-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate [J].

Cicek, E. ;

McClintock, R. ;

Cho, C. Y. ;

Rahnema, B. ;

Razeghi, M. .

APPLIED PHYSICS LETTERS, 2013, 103 (18)

[7]

Fenfen T., 2014, J SEMICOND, V35

[8] Interface annealing characterization of Ti/Al/Au ohmic contacts to p-type 4H-SiC [J].

Han Chao ;

Zhang Yuming ;

Song Qingwen ;

Tang Xiaoyan ;

Guo Hui ;

Zhang Yimen ;

Yang Fei ;

Niu Yingxi .

JOURNAL OF SEMICONDUCTORS, 2015, 36 (12)

[9] Intersubband Transition-Based Processes and Devices in AlN/GaN-Based Heterostructures [J].

Hofstetter, Daniel ;

Baumann, Esther ;

Giorgetta, Fabrizio Raphael ;

Theron, Ricardo ;

Wu, Hong ;

Schaff, William J. ;

Dawlaty, Jahan ;

George, Paul A. ;

Eastman, Lester F. ;

Rana, Farhan ;

Kandaswamy, Prem K. ;

Guillot, Fabien ;

Monroy, Eva .

PROCEEDINGS OF THE IEEE, 2010, 98 (07) :1234-1248

[10] The complex impact of silicon and oxygen on the n-type conductivity of high-Al-content AlGaN [J].

Kakanakova-Georgieva, A. ;

Nilsson, D. ;

Trinh, X. T. ;

Forsberg, U. ;

Son, N. T. ;

Janzen, E. .

APPLIED PHYSICS LETTERS, 2013, 102 (13)

← 1 2 3 4 5 →