Large-Signal Modeling of GaN Devices with Emphasis on Trapping Effect and Thermal Challenges

被引：0

作者：

Lin, Fujiang ^{[1
]}

Qian, Weiqiang ^{[1
]}

Li, Lei ^{[1
]}

Khan, Mehdi ^{[1
]}

机构：

[1] Univ Sci & Technol China, Dept Elect Sci & Technol, Hefei 230027, Anhui, Peoples R China

来源：

2015 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT) | 2015年

关键词：

GaN; drain-lag; gate-lag; trapping effects; thermal modeling; PA design;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

this paper will present the recent development of large-signal modeling cum PA design based on Dynax GaN HEMT devices. A modified Angelov model is used to model the pulse I-V data. Improved modeling results to address the trapping effect will be given together with new model parameter extraction methodology. The model is implemented in a commercial EDA tools for PA design simulation.

引用

页码：223 / 225

页数：3

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