Electrochemical impedance spectroscopy of carboxylic-acid terminal alkanethiol self assembled monolayers on GaAs substrates

被引:20
作者
Wu, Lingling [1 ]
Camacho-Alanis, Fernanda [1 ]
Castaneda, Homero [2 ]
Zangari, Giovanni [3 ]
Swami, Nathan [1 ]
机构
[1] Univ Virginia, Dept Elect Engn, Charlottesville, VA 22904 USA
[2] Battelle Mem Inst Energy Syst, Columbus, OH 43201 USA
[3] Univ Virginia, Dept Mat Sci, Charlottesville, VA 22904 USA
基金
美国国家科学基金会;
关键词
Self assembled monolayers; Semiconductor passivation; Electrochemical impedance spectroscopy; GaAs; Semiconductor depolarization; BARE SEMICONDUCTOR SURFACES; ORGANIZED MOLECULAR ASSEMBLIES; NORMAL-ALKANOIC ACIDS; GALLIUM-ARSENIDE; ALKYL-CHAIN; ELECTRONIC-PROPERTIES; PACKING DENSITY; N-GAAS; JUNCTIONS; CORROSION;
D O I
10.1016/j.electacta.2010.08.001
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Adsorbate-Induced charge depolarization can influence the organization of self assembled monolayers (SAMs) on semiconductor surfaces especially as a function of the SAM functional group SAM length and substrate dopant level and type Based on systematic differences in the frequency response of the electrochemical impedance and phase data for carboxylic acid (COOH) terminal alkanethiol monolayers of varying alkane chain length assembled on GaAs substrates of different dopant level and type we assessed the relative monolayer quality through fits to an appropriate equivalent circuit analog to compare the proportion of defects and SAM-induced semiconductor depolarization At the open circuit potential in the NaCl phosphate buffer while SAMs on p+ GaAs were of marginally better quality than those on p GaAs SAMs on n+ GaAs exhibited a far superior quality than those formed on n GaAs COOH-terminal SAMs of longer chain lengths formed higher quality monolayers at all the substrate doping levels COOH-terminal SAM modified n and n+ GaAs surfaces were passivated and stable over a wider voltage range than SAM modified p and p+ GaAs surfaces from cyclic voltammetry The poorer quality of COOH-terminal SAMs formed on GaAs substrates at the lower doping levels is attributed to the disorder as a result of the enhanced degree of charge depolarization at these surfaces as substantiated by systematic variations in the space charge capacitance upon SAM modification that suggest a negative surface dipole (C) 2010 Elsevier Ltd All rights reserved
引用
收藏
页码:8758 / 8765
页数:8
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