Effect of thermal annealing on ZnO:hAl thin films grown by spray pyrolysis

被引：35
作者：
El Manouni, A.
Manjon, F. J.
Perales, M.
Mollar, M.
Mari, B.
Lopez, M. C.
Barrado, J. R. Ramos
机构：
[1] Univ Politecn Valencia, Dept Fis Aplicada, E-46022 Valencia, Spain
[2] Univ Hassa 2, Dept Phys, Mohammadia, Morocco
[3] Univ Malaga, Dept Fis Aplicada 1, E-29071 Malaga, Spain
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2007年 / 42卷 / 1-6期
关键词：
zinc oxide; II-VI semi conductors; Wide bandgap semiconductors;
D O I：
10.1016/j.spmi.2007.04.005
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We report the effect of thermal annealing in air on the structural and optical properties of undoped and aluminium-doped (1%-4%) zinc oxide (AZO) thin films, grown by the spray pyrolysis technique on quartz substrates. Films were characterized by X-ray diffraction, low-temperature photoluminescence, electrical resistivity, and Raman spectroscopy after annealing at temperatures between 500 and 900 degrees C. Annealing in air improves the long-range order crystalline quality of the bulk crystals, but promotes a number of point defects in the surface affecting both the resistivity and the photoluminescence. (c) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码：134 / 139
页数：6
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