A Review on Die Attach Materials for SiC-Based High-Temperature Power Devices

被引:292
作者
Chin, Hui Shun [1 ]
Cheong, Kuan Yew [1 ]
Ismail, Ahmad Badri [1 ]
机构
[1] Univ Sains Malaysia, Energy Efficient & Sustainable Semicond Res Grp, Sch Mat & Mineral Resources Engn, Nibong Tebal 14300, Penang, Malaysia
来源
METALLURGICAL AND MATERIALS TRANSACTIONS B-PROCESS METALLURGY AND MATERIALS PROCESSING SCIENCE | 2010年 / 41卷 / 04期
关键词
THIN-FILM COUPLES; LEAD-FREE SOLDERS; SILICON-CARBIDE; SILVER-PASTE; SEMICONDUCTOR; ELECTRONICS; AU; INTERCONNECTS; ENVIRONMENTS; RELIABILITY;
D O I
10.1007/s11663-010-9365-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Recently, high-temperature power devices have become a popular discussion topic because of their various potential applications in the automotive, down-hole oil and gas industries for well logging, aircraft, space exploration, nuclear environments, and radars. Devices for these applications are fabricated on silicon carbide-based semiconductor material. For these devices to perform effectively, an appropriate die attach material with specific requirements must be selected and employed correctly. This article presents a review of this topic, with a focus on the die attach materials operating at temperatures higher than 623 K (350 A degrees C). Future challenges and prospects related to high-temperature die attach materials also are proposed at the end of this article.
引用
收藏
页码:824 / 832
页数:9
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