A Review on Die Attach Materials for SiC-Based High-Temperature Power Devices

被引:300
作者
Chin, Hui Shun [1 ]
Cheong, Kuan Yew [1 ]
Ismail, Ahmad Badri [1 ]
机构
[1] Univ Sains Malaysia, Energy Efficient & Sustainable Semicond Res Grp, Sch Mat & Mineral Resources Engn, Nibong Tebal 14300, Penang, Malaysia
来源
METALLURGICAL AND MATERIALS TRANSACTIONS B-PROCESS METALLURGY AND MATERIALS PROCESSING SCIENCE | 2010年 / 41卷 / 04期
关键词
THIN-FILM COUPLES; LEAD-FREE SOLDERS; SILICON-CARBIDE; SILVER-PASTE; SEMICONDUCTOR; ELECTRONICS; AU; INTERCONNECTS; ENVIRONMENTS; RELIABILITY;
D O I
10.1007/s11663-010-9365-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Recently, high-temperature power devices have become a popular discussion topic because of their various potential applications in the automotive, down-hole oil and gas industries for well logging, aircraft, space exploration, nuclear environments, and radars. Devices for these applications are fabricated on silicon carbide-based semiconductor material. For these devices to perform effectively, an appropriate die attach material with specific requirements must be selected and employed correctly. This article presents a review of this topic, with a focus on the die attach materials operating at temperatures higher than 623 K (350 A degrees C). Future challenges and prospects related to high-temperature die attach materials also are proposed at the end of this article.
引用
收藏
页码:824 / 832
页数:9
相关论文
共 67 条
[21]  
Ishiko M., 2004, TECH J RD REV, V39, P1
[22]  
IWASAKI H, 2003, T JPN SOC MECH ENG, V6, P251
[23]   Power device packaging technologies for extreme environments [J].
Johnson, R. Wayne ;
Wang, Cai ;
Liu, Yi ;
Scofield, James D. .
IEEE TRANSACTIONS ON ELECTRONICS PACKAGING MANUFACTURING, 2007, 30 (03) :182-193
[24]   The changing automotive environment: High-temperature electronics [J].
Johnson, RW ;
Evans, JL ;
Jacobsen, P ;
Thompson, JRR ;
Christopher, M .
IEEE TRANSACTIONS ON ELECTRONICS PACKAGING MANUFACTURING, 2004, 27 (03) :164-176
[25]  
KEELERE R, 1989, EP P, V29, P14
[26]   Die-attachment solutions for SiC power devices [J].
Kisiel, R. ;
Szczepanski, Z. .
MICROELECTRONICS RELIABILITY, 2009, 49 (06) :627-629
[27]  
KLEIN JW, 1995, 1955 INT S SIGN SYST, P157
[28]  
KOLAWA E, 2006, HIGH TEMP EL C HITEC
[29]   Comparison between epi-down and epi-up bonded high-power single-mode 980-nm semiconductor lasers [J].
Liu, XS ;
Hu, MH ;
Nguyen, HK ;
Caneau, CG ;
Rasmussen, MH ;
Davis, RW ;
Zah, CE .
IEEE TRANSACTIONS ON ADVANCED PACKAGING, 2004, 27 (04) :640-646
[30]  
LU GQ, 2004, 1 ACM HARDC DOC PROC, P42