Ultralow Dissipation Patterned Silicon Nanowire Arrays for Scanning Probe Microscopy

被引:17
|
作者
Sahafi, Pardis [1 ,2 ]
Rose, William [3 ]
Jordan, Andrew [1 ,2 ]
Yager, Ben [1 ,2 ]
Pisciteli, Michele [1 ,2 ]
Budakian, Ram [1 ,2 ,4 ]
机构
[1] Univ Waterloo, Dept Phys, Waterloo, ON N2L 3G1, Canada
[2] Univ Waterloo, Inst Quantum Comp, Waterloo, ON N2L 3G1, Canada
[3] Univ Illinois, Dept Phys, Urbana, IL 61801 USA
[4] Canadian Inst Adv Res, Toronto, ON M5G 1Z8, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
Mechanical resonator; SiNW; silicon; nanowire; SPM; force detection; FORCE MICROSCOPY; PRINCIPLES;
D O I
10.1021/acs.nanolett.9b03668
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
In recent years, self-assembled semiconductor nanowires have been successfully used as ultrasensitive cantilevers in a number of unique scanning probe microscopy (SPM) settings. We describe the fabrication of ultralow dissipation patterned silicon nanowire (SiNW) arrays optimized for scanning probe applications. Our fabrication process produces ultrahigh aspect ratio vertical SiNWs that exhibit exceptional force sensitivity. The highest sensitivity SiNWs have thermomechanical noise-limited force sensitivity of 9.7 +/- 0.4 aN/root Hz at room temperature and 500 +/- 20 zN/root Hz at 4 K. To facilitate their use in SPM, the SiNWs are patterned within 7 mu m from the edge of the substrate, allowing convenient optical access for displacement detection.
引用
收藏
页码:218 / 223
页数:6
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