Identification of surface atoms of LiGaO2(001) substrate for hexagonal GaN film by coaxial impact collision ion scattering spectroscopy

被引：6
作者：
Ishii, T
Mukaida, M
Nishihara, T
Hayashi, S
Shinohara, M
机构：
[1] NTT, Syst Elect Labs, Atsugi, Kanagawa 2430198, Japan
[2] Shimadzu Corp, Surface Anal & Semicond Equipment Dept, Kanagawa 2591304, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 6A期
关键词：
LiGaO2; substrate; CAICISS; surface; GaN; polar crystal;
D O I：
10.1143/JJAP.37.L672
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Terminating surface atoms of LiGaO2(001) substrate for GaN thin film growth have been directly identified by coaxial impact collision ion scattering spectroscopy (CAICISS). We found that the terminating atoms of the easily etched surface of the substrate are oxygen and that those of the hardly etched surface are metal (Li and Ga). The relation is explained by the surface bonding model of the wurtzite-type An-BN compound. GaN thin films grew epitaxially only on the metal surface of the substrate.
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收藏
页码：L672 / L674
页数：3
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