The band structure calculation of tensile strained GaNAsBi/GaAs quantum well heterostructure

被引：3

作者：

Ajnef, N. ^{[1
]}

Habchi, M. M. ^{[1
,2
]}

Rebey, A. ^{[1
,3
]}

机构：

[1] Univ Monastir, Fac Sci, Res Lab Heteroepitaxies & Applicat, Monastir 5019, Tunisia

[2] Univ Sousse, Higher Inst Transport & Logist, Sousse 4023, Tunisia

[3] Qassim Univ, Coll Sci, Dept Phys, POB 6622, Buraydah, Qassim, Saudi Arabia

来源：

MICRO AND NANOSTRUCTURES | 2022年 / 164卷

关键词：

Interband transitions; Intersubband transitions; GaAsNBi alloy; Tensile strain; Quantum well; Polarization mode;

D O I：

10.1016/j.spmi.2022.107156

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The optical properties of interband and intersubband transitions in the GaNAsBi/GaAs quantum well (QW) heterostructure have been systematically studied by solving the Schro???dinger equation. Theoretical optimization of physical parameters of the GaNAsBi tensile strained layer has pointed out the importance of the polarization mode in the change of the optical absorption magnitude. Indeed, the N and Bi compositions and the quantum well width variations are thoroughly dis-cussed. For specific well parameters, the intersubband absorption spectrum of QW operating at 9:5 ??m as well as its magnitude dependence on the applied electric field and doping concentration are simulated. Based on the calculated absorption spectra, we can expect that the photodetection spectra of the future designed system can be tuned by controlling these relevant parameters.

引用

页数：9