Symmetric coupling of the finite-element and the boundary-element method for electro-quasistatic field Simulations

被引：0
|
作者：
Steinmetz, T. [1 ]
Goedel, N. [1 ]
Wimmer, G. [1 ]
Clemens, M. [1 ]
Kurz, S. [1 ]
Bebendorf, M. [2 ]
Rjasanow, S. [3 ]
机构：
[1] Helmut Schmidt Univ, Dept Elect Engn, D-22043 Hamburg, Germany
[2] Univ Leipzig, Math Inst, D-04109 Leipzig, Germany
[3] Univ Saarland, Math Inst, D-66041 Saarbrucken, Germany
来源：
SCIENTIFIC COMPUTING IN ELECTRICAL ENGINEERING | 2007年 / 11卷
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中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
The electrodynamic simulation of 3D high-voltage technical devices can be performed under the electro-quasistatic assumption. In order to avoid large spatial discretization domains, a Finite-Element-Method (FEM) is coupled to a Boundary-Element-Method (BEM) which implicitly asserts the electrophysical asymptotic attenuation condition. A symmetric FEM-BEM coupled formulation in time domain is presented. Numerical results are shown for the simulation of a three dimensional high-voltage application.
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页码：309 / +
页数：3
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