Size-Dependent Electrical Transport in CdSe Nanocrystal Thin Films

被引:133
|
作者
Kang, Moon Sung [1 ]
Sahu, Ayaskanta [1 ]
Norris, David J. [1 ]
Frisbie, C. Daniel [1 ]
机构
[1] Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA
基金
美国国家科学基金会;
关键词
CdSe nanocrystals; electrical transport; size dependence; thin-film transistors; ion-gel gate dielectric; QUANTUM; SOLIDS; CONDUCTION;
D O I
10.1021/nl102356x
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Electrical transport in films of CdSe nanocrystals with diameters varying from 2.9 to 5.1 nm was examined over 233-300 K by employing electrolyte gating to control the electron density. The transport parameters varied strongly and systematically with nanocrystal diameter. First, a strong correlation was observed between the device turn-on voltage and the size-dependent position of the lowest unoccupied electronic states of the nanocrystals. Second, the electron mobility increased with increasing particle diameter and reached a high value of 0.6 cm(2)/(V s) for films with 5.1 nm nanocrystals. Third, the charge transport could be described in terms of the nearest-neighbor-hopping mechanism with a size-dependent activation energy and a pre-exponential factor for mobility. The activation energy can be viewed as a size-dependent charging energy of an individual nanocrystal. Collectively, the combination of size and temperature-dependent measurements provides a powerful approach to understanding electrical transport in nanocrystal films.
引用
收藏
页码:3727 / 3732
页数:6
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