High-mobility InGaAs/InAlAs pseudomorphic heterostructures on InP (001)

被引：25

作者：

Wallart, X ^{[1
]}

Pinsard, B ^{[1
]}

Mollot, F ^{[1
]}

机构：

[1] CNRS, Inst Elect Microelect & Nanotechnol, UMR 8520, F-59652 Villeneuve Dascq, France

来源：

JOURNAL OF APPLIED PHYSICS | 2005年 / 97卷 / 05期

关键词：

D O I：

10.1063/1.1858871

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, we study the growth of strained InxGa1-xAs alloys on InP by gas source molecular-beam epitaxy in the 350-500 degrees C range. At low temperatures, we show that the As-rich (2x3) surface reconstruction promotes three-dimensional growth mode whereas the less As-rich (2x4) and cation-rich ones allow keeping two-dimensional growth. For heterostructures with a lattice-matched InAlAs barrier and a strained In0.75Ga0.25As channel, grown at 500 degrees C, the electron mobility rises to 16 000 and 139 000 cm(2)/V s at 300 and 77 K, respectively, for a 140-Athick channel layer and a 400-A-thick spacer layer. Both values are among the best ones ever reported for an InGaAs/InAlAs heterostructure. (C) 2005 American Institute of Physics.

引用

页数：6

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