Doping of group III nitrides

被引：65

作者：

Ploog, KH ^{[1
]}

Brandt, O ^{[1
]}

机构：

[1] Paul Drude Inst Solid State Elect, D-10117 Berlin, Germany

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1998年 / 16卷 / 03期

关键词：

D O I：

10.1116/1.581128

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Recent advances in the understanding of the origin of the notorious residual n-type conductivity in GaN and our new concept of co-doping for improved p-type conductivity in GaN are briefly reviewed. Our experimental data reveal that O from residual H2O, which substitutes N on lattice sites, is the origin for the observed n-type conductivity. Go-doping with Be and O to form donor-accepted pairs in GaN results in a strongly improved p-type conductivity at room temperature due to a substantial enhancement of the hole mobility. This concept has been independently confirmed by theoretical calculations. (C) 1998 American Vacuum Society.

引用

页码：1609 / 1614

页数：6

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