A new strategy to prepare N-doped holey graphene for high-volumetric supercapacitors

被引：98

作者：

Dong, Xinwei ^{[1
]}

Hu, Nantao ^{[1
]}

Wei, Liangming ^{[1
]}

Su, Yanjie ^{[1
]}

Wei, Hao ^{[1
]}

Yao, Lu ^{[1
]}

Li, Xiaolin ^{[1
]}

Zhang, Yafei ^{[1
]}

机构：

[1] Shanghai Jiao Tong Univ, Dept Micro Nano Elect, Minist Educ, Key Lab Thin Film & Microfabricat, Shanghai 200240, Peoples R China

来源：

JOURNAL OF MATERIALS CHEMISTRY A | 2016年 / 4卷 / 25期

基金：

中国国家自然科学基金;

关键词：

POROUS CARBON; ENERGY; OXIDE; CAPACITANCE; REDUCTION; MECHANISM; OXIDATION; ELECTRODE; TEMPLATE; FILMS;

D O I：

10.1039/c6ta01406b

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

N-doped holey graphene (N-HG) was successfully prepared by a novel "Bottom-up" strategy with scalable and low cost characteristics. The as-obtained N-HG possessed amounts of in-plane holes, a high specific surface area (1602 m(2) g(-1)), a high nitrogen content and could be easily stacked to form a high density carbon monolith which presented a maximum volumetric capacitance of 397 F cm(-3) for supercapacitors.

引用

页码：9739 / 9743

页数：5

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