Gate-Tunable Atomically Thin Lateral MoS2 Schottky Junction Patterned by Electron Beam

被引：113

作者：

Katagiri, Y. ^{[1
]}

Nakamura, T. ^{[3
]}

Ishii, A. ^{[2
]}

Ohata, C. ^{[1
]}

Hasegawa, M. ^{[2
]}

Katsumoto, S. ^{[3
]}

Cusati, T. ^{[4
]}

Fortunelli, A. ^{[5
]}

Iannaccone, G. ^{[4
]}

Fiori, G. ^{[4
]}

Roche, S. ^{[6
,7
,8
]}

Haruyama, J. ^{[1
]}

机构：

[1] Aoyama Gakuin Univ, Dept Elect Engn & Elect, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 2525258, Japan

[2] Aoyama Gakuin Univ, Dept Chem & Biol Sci, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 2525258, Japan

[3] Univ Tokyo, Inst Solid State Phys, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778581, Japan

[4] Univ Pisa, Dipartimento Ingn Informaz, Via G Caruso 16, I-56122 Pisa, Italy

[5] CNR ICCOM, Via Giuseppe Moruzzi 1, I-56124 Pisa, Italy

[6] CSIC, Catalan Inst Nanosci & Nanotechnol, Campus UAB, Barcelona 08193, Spain

[7] Barcelona Inst Sci & Technol, Campus UAB, Barcelona 08193, Spain

[8] Inst Catalana Recerca & Estudis Avancats, ICREA, Barcelona 08070, Spain

来源：

NANO LETTERS | 2016年 / 16卷 / 06期

关键词：

Atomically thin layers; Schottky junction; semiconductor-metal transition; electron-beam irradiation; IT phase; 2-DIMENSIONAL CRYSTALS; GRAPHENE; HETEROSTRUCTURES; TRANSITION; 1T;

D O I：

10.1021/acs.nanolett.6b01186

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Among atomically thin two-dimensional (2D) materials, molybdenum disulfide (MoS2) is attracting considerable attention because of its direct bandgap in the 2H semiconducting phase. On the other hand, a 1T-metallic phase has been revealed, bringing complementary application. Recently, thanks to top-down fabrication using electron beam (EB) irradiation techniques, in-plane 1T-metal/2H-semiconductor lateral (Schottky) MoS2 junctions were demonstrated, opening a path toward the co-integration of active and passive two-dimensional devices. Here, we report the first transport measurements evidencing the formation of a MoS2 Schottky barrier (SB) junction with barrier height of 0.13-0.18 eV created at the interface between EB-irradiated (1T)/nonirradiated (2H) regions. Our experimental findings, supported by state-of-the-art simulation, reveal unique device fingerprint of SB-based field-effect transistors made from atom-thin 1T layers.

引用

页码：3788 / 3794

页数：7

共 44 条

[41] SOFT SELF-CONSISTENT PSEUDOPOTENTIALS IN A GENERALIZED EIGENVALUE FORMALISM [J].

VANDERBILT, D .

PHYSICAL REVIEW B, 1990, 41 (11) :7892-7895

[42] Integrated Circuits Based on Bilayer MoS2 Transistors [J].

Wang, Han ;

Yu, Lili ;

Lee, Yi-Hsien ;

Shi, Yumeng ;

Hsu, Allen ;

Chin, Matthew L. ;

Li, Lain-Jong ;

Dubey, Madan ;

Kong, Jing ;

Palacios, Tomas .

NANO LETTERS, 2012, 12 (09) :4674-4680

[43] Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier [J].

Yang, Heejun ;

Heo, Jinseong ;

Park, Seongjun ;

Song, Hyun Jae ;

Seo, David H. ;

Byun, Kyung-Eun ;

Kim, Philip ;

Yoo, InKyeong ;

Chung, Hyun-Jong ;

Kim, Kinam .

SCIENCE, 2012, 336 (6085) :1140-1143

[44] Tuning the Graphene Work Function by Electric Field Effect [J].

Yu, Young-Jun ;

Zhao, Yue ;

Ryu, Sunmin ;

Brus, Louis E. ;

Kim, Kwang S. ;

Kim, Philip .

NANO LETTERS, 2009, 9 (10) :3430-3434

← 1 2 3 4 5 →