Gate-Tunable Atomically Thin Lateral MoS2 Schottky Junction Patterned by Electron Beam

被引：113

作者：

Katagiri, Y. ^{[1
]}

Nakamura, T. ^{[3
]}

Ishii, A. ^{[2
]}

Ohata, C. ^{[1
]}

Hasegawa, M. ^{[2
]}

Katsumoto, S. ^{[3
]}

Cusati, T. ^{[4
]}

Fortunelli, A. ^{[5
]}

Iannaccone, G. ^{[4
]}

Fiori, G. ^{[4
]}

Roche, S. ^{[6
,7
,8
]}

Haruyama, J. ^{[1
]}

机构：

[1] Aoyama Gakuin Univ, Dept Elect Engn & Elect, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 2525258, Japan

[2] Aoyama Gakuin Univ, Dept Chem & Biol Sci, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 2525258, Japan

[3] Univ Tokyo, Inst Solid State Phys, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778581, Japan

[4] Univ Pisa, Dipartimento Ingn Informaz, Via G Caruso 16, I-56122 Pisa, Italy

[5] CNR ICCOM, Via Giuseppe Moruzzi 1, I-56124 Pisa, Italy

[6] CSIC, Catalan Inst Nanosci & Nanotechnol, Campus UAB, Barcelona 08193, Spain

[7] Barcelona Inst Sci & Technol, Campus UAB, Barcelona 08193, Spain

[8] Inst Catalana Recerca & Estudis Avancats, ICREA, Barcelona 08070, Spain

来源：

NANO LETTERS | 2016年 / 16卷 / 06期

关键词：

Atomically thin layers; Schottky junction; semiconductor-metal transition; electron-beam irradiation; IT phase; 2-DIMENSIONAL CRYSTALS; GRAPHENE; HETEROSTRUCTURES; TRANSITION; 1T;

D O I：

10.1021/acs.nanolett.6b01186

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Among atomically thin two-dimensional (2D) materials, molybdenum disulfide (MoS2) is attracting considerable attention because of its direct bandgap in the 2H semiconducting phase. On the other hand, a 1T-metallic phase has been revealed, bringing complementary application. Recently, thanks to top-down fabrication using electron beam (EB) irradiation techniques, in-plane 1T-metal/2H-semiconductor lateral (Schottky) MoS2 junctions were demonstrated, opening a path toward the co-integration of active and passive two-dimensional devices. Here, we report the first transport measurements evidencing the formation of a MoS2 Schottky barrier (SB) junction with barrier height of 0.13-0.18 eV created at the interface between EB-irradiated (1T)/nonirradiated (2H) regions. Our experimental findings, supported by state-of-the-art simulation, reveal unique device fingerprint of SB-based field-effect transistors made from atom-thin 1T layers.

引用

页码：3788 / 3794

页数：7

共 44 条

[21] Ballistic carbon nanotube field-effect transistors [J].

Javey, A ;

Guo, J ;

Wang, Q ;

Lundstrom, M ;

Dai, HJ .

NATURE, 2003, 424 (6949) :654-657

[22] Optimizing Hybridization of 1T and 2H Phases in MoS2 Monolayers to Improve Capacitances of Supercapacitors [J].

Jiang, Lianfu ;

Zhang, Shengli ;

Kulinich, Sergei A. ;

Song, Xiufeng ;

Zhu, Junwu ;

Wang, Xin ;

Zeng, Haibo .

MATERIALS RESEARCH LETTERS, 2015, 3 (04) :177-183

[23] High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity [J].

Kang, Kibum ;

Xie, Saien ;

Huang, Lujie ;

Han, Yimo ;

Huang, Pinshane Y. ;

Mak, Kin Fai ;

Kim, Cheol-Joo ;

Muller, David ;

Park, Jiwoong .

NATURE, 2015, 520 (7549) :656-660

[24]

Kappera R, 2014, NAT MATER, V13, P1128, DOI [10.1038/NMAT4080, 10.1038/nmat4080]

[25]

Lee CH, 2014, NAT NANOTECHNOL, V9, P676, DOI [10.1038/NNANO.2014.150, 10.1038/nnano.2014.150]

[26] Graphene and boron nitride lateral heterostructures for atomically thin circuitry [J].

Levendorf, Mark P. ;

Kim, Cheol-Joo ;

Brown, Lola ;

Huang, Pinshane Y. ;

Havener, Robin W. ;

Muller, David A. ;

Park, Jiwoong .

NATURE, 2012, 488 (7413) :627-632

[27]

Li LK, 2014, NAT NANOTECHNOL, V9, P372, DOI [10.1038/nnano.2014.35, 10.1038/NNANO.2014.35]

[28]

Lin YC, 2014, NAT NANOTECHNOL, V9, P391, DOI [10.1038/nnano.2014.64, 10.1038/NNANO.2014.64]

[29] SCHOTTKY-BARRIER FORMATION ON A COVALENT SEMICONDUCTOR WITHOUT FERMI-LEVEL PINNING - THE METAL-MOS2(0001) INTERFACE [J].

LINCE, JR ;

CARRE, DJ ;

FLEISCHAUER, PD .

PHYSICAL REVIEW B, 1987, 36 (03) :1647-1656

[30] Gram-Scale Aqueous Synthesis of Stable Few-Layered 1T-MoS2: Applications for Visible-Light-Driven Photocatalytic Hydrogen Evolution [J].

Liu, Qin ;

Li, Xiuling ;

He, Qun ;

Khalil, Adnan ;

Liu, Daobin ;

Xiang, Ting ;

Wu, Xiaojun ;

Song, Li .

SMALL, 2015, 11 (41) :5556-5564

← 1 2 3 4 5 →