Gate-Tunable Atomically Thin Lateral MoS2 Schottky Junction Patterned by Electron Beam

被引：113

作者：

Katagiri, Y. ^{[1
]}

Nakamura, T. ^{[3
]}

Ishii, A. ^{[2
]}

Ohata, C. ^{[1
]}

Hasegawa, M. ^{[2
]}

Katsumoto, S. ^{[3
]}

Cusati, T. ^{[4
]}

Fortunelli, A. ^{[5
]}

Iannaccone, G. ^{[4
]}

Fiori, G. ^{[4
]}

Roche, S. ^{[6
,7
,8
]}

Haruyama, J. ^{[1
]}

机构：

[1] Aoyama Gakuin Univ, Dept Elect Engn & Elect, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 2525258, Japan

[2] Aoyama Gakuin Univ, Dept Chem & Biol Sci, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 2525258, Japan

[3] Univ Tokyo, Inst Solid State Phys, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778581, Japan

[4] Univ Pisa, Dipartimento Ingn Informaz, Via G Caruso 16, I-56122 Pisa, Italy

[5] CNR ICCOM, Via Giuseppe Moruzzi 1, I-56124 Pisa, Italy

[6] CSIC, Catalan Inst Nanosci & Nanotechnol, Campus UAB, Barcelona 08193, Spain

[7] Barcelona Inst Sci & Technol, Campus UAB, Barcelona 08193, Spain

[8] Inst Catalana Recerca & Estudis Avancats, ICREA, Barcelona 08070, Spain

来源：

NANO LETTERS | 2016年 / 16卷 / 06期

关键词：

Atomically thin layers; Schottky junction; semiconductor-metal transition; electron-beam irradiation; IT phase; 2-DIMENSIONAL CRYSTALS; GRAPHENE; HETEROSTRUCTURES; TRANSITION; 1T;

D O I：

10.1021/acs.nanolett.6b01186

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Among atomically thin two-dimensional (2D) materials, molybdenum disulfide (MoS2) is attracting considerable attention because of its direct bandgap in the 2H semiconducting phase. On the other hand, a 1T-metallic phase has been revealed, bringing complementary application. Recently, thanks to top-down fabrication using electron beam (EB) irradiation techniques, in-plane 1T-metal/2H-semiconductor lateral (Schottky) MoS2 junctions were demonstrated, opening a path toward the co-integration of active and passive two-dimensional devices. Here, we report the first transport measurements evidencing the formation of a MoS2 Schottky barrier (SB) junction with barrier height of 0.13-0.18 eV created at the interface between EB-irradiated (1T)/nonirradiated (2H) regions. Our experimental findings, supported by state-of-the-art simulation, reveal unique device fingerprint of SB-based field-effect transistors made from atom-thin 1T layers.

引用

页码：3788 / 3794

页数：7

共 44 条

[1]

Acerce M, 2015, NAT NANOTECHNOL, V10, P313, DOI [10.1038/NNANO.2015.40, 10.1038/nnano.2015.40]

[2] Effects of electron confinement on thermionic emission current in a modulation doped heterostructure [J].

Anwar, A ;

Nabet, B ;

Culp, J ;

Castro, F .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (05) :2663-2666

[3] Field-modulated carrier transport in carbon nanotube transistors [J].

Appenzeller, J ;

Knoch, J ;

Derycke, V ;

Martel, R ;

Wind, S ;

Avouris, P .

PHYSICAL REVIEW LETTERS, 2002, 89 (12) :126801-126801

[4] Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures [J].

Britnell, L. ;

Gorbachev, R. V. ;

Jalil, R. ;

Belle, B. D. ;

Schedin, F. ;

Mishchenko, A. ;

Georgiou, T. ;

Katsnelson, M. I. ;

Eaves, L. ;

Morozov, S. V. ;

Peres, N. M. R. ;

Leist, J. ;

Geim, A. K. ;

Novoselov, K. S. ;

Ponomarenko, L. A. .

SCIENCE, 2012, 335 (6071) :947-950

[5] Graphene-Silicon Schottky Diodes [J].

Chen, Chun-Chung ;

Aykol, Mehmet ;

Chang, Chia-Chi ;

Levi, A. F. J. ;

Cronin, Stephen B. .

NANO LETTERS, 2011, 11 (05) :1863-1867

[6] Phase patterning for ohmic homojunction contact in MoTe2 [J].

Cho, Suyeon ;

Kim, Sera ;

Kim, Jung Ho ;

Zhao, Jiong ;

Seok, Jinbong ;

Keum, Dong Hoon ;

Baik, Jaeyoon ;

Choe, Duk-Hyun ;

Chang, K. J. ;

Suenaga, Kazu ;

Kim, Sung Wng ;

Lee, Young Hee ;

Yang, Heejun .

SCIENCE, 2015, 349 (6248) :625-628

[7] Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices [J].

Choi, Min Sup ;

Lee, Gwan-Hyoung ;

Yu, Young-Jun ;

Lee, Dae-Yeong ;

Lee, Seung Hwan ;

Kim, Philip ;

Hone, James ;

Yoo, Won Jong .

NATURE COMMUNICATIONS, 2013, 4

[8] TWO-DIMENSIONAL CRYSTALS Phosphorus joins the familly [J].

Churchill, Hugh. H. ;

Jarillo-Herrero, Pablo .

NATURE NANOTECHNOLOGY, 2014, 9 (05) :330-331

[9] Coherent Atomic and Electronic Heterostructures of Single-Layer MoS2 [J].

Eda, Goki ;

Fujita, Takeshi ;

Yamaguchi, Hisato ;

Voiry, Damien ;

Chen, Mingwei ;

Chhowalla, Manish .

ACS NANO, 2012, 6 (08) :7311-7317

[10] Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems [J].

Ferrari, Andrea C. ;

Bonaccorso, Francesco ;

Fal'ko, Vladimir ;

Novoselov, Konstantin S. ;

Roche, Stephan ;

Boggild, Peter ;

Borini, Stefano ;

Koppens, Frank H. L. ;

Palermo, Vincenzo ;

Pugno, Nicola ;

Garrido, Jose A. ;

Sordan, Roman ;

Bianco, Alberto ;

Ballerini, Laura ;

Prato, Maurizio ;

Lidorikis, Elefterios ;

Kivioja, Jani ;

Marinelli, Claudio ;

Ryhaenen, Tapani ;

Morpurgo, Alberto ;

Coleman, Jonathan N. ;

Nicolosi, Valeria ;

Colombo, Luigi ;

Fert, Albert ;

Garcia-Hernandez, Mar ;

Bachtold, Adrian ;

Schneider, Gregory F. ;

Guinea, Francisco ;

Dekker, Cees ;

Barbone, Matteo ;

Sun, Zhipei ;

Galiotis, Costas ;

Grigorenko, Alexander N. ;

Konstantatos, Gerasimos ;

Kis, Andras ;

Katsnelson, Mikhail ;

Vandersypen, Lieven ;

Loiseau, Annick ;

Morandi, Vittorio ;

Neumaier, Daniel ;

Treossi, Emanuele ;

Pellegrini, Vittorio ;

Polini, Marco ;

Tredicucci, Alessandro ;

Williams, Gareth M. ;

Hong, Byung Hee ;

Ahn, Jong-Hyun ;

Kim, Jong Min ;

Zirath, Herbert ;

van Wees, Bart J. .

NANOSCALE, 2015, 7 (11) :4598-4810

← 1 2 3 4 5 →