Deep defects in Cu2ZnSnS4 monograin solar cells

被引：38

作者：

Kask, E. ^{[1
]}

Raadik, T. ^{[1
]}

Grossberg, M. ^{[1
]}

Josepson, R. ^{[1
]}

Krustok, J. ^{[1
]}

机构：

[1] Tallinn Univ Technol, EE-19086 Tallinn, Estonia

来源：

EUROPEAN MATERIALS RESEARCH SOCIETY CONFERENCE SYMPOSIUM: ADVANCED INORGANIC MATERIALS AND CONCEPTS FOR PHOTOVOLTAICS | 2011年 / 10卷

关键词：

Cu2ZnSnS4; admittance spectroscopy; quantum efficiency; defects; THIN-FILMS;

D O I：

10.1016/j.egypro.2011.10.188

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this report Cu2ZnSnS4 (CZTS) monograin layer (MGL) solar cells were studied using admittance spectroscopy (AS) (frequency range 20Hz-10MHz) and temperature dependence of quantum efficiency (QE) curves (T-10K-300K). These studies revealed two deep defect states at E-A1= 120 meV and at E-A2= 167 meV. The first state was present in different CZTS cells while the second state had somewhat different properties in different cells. The temperature dependence of QE curves showed a shift of the long wavelength edge with increasing temperature by about 110 meV towards higher energy. The possible origin of the observed deep defect states is discussed. (C) 2011 Published by Elsevier Ltd. Selection and/or peer-review under responsibility of Organizers of European Materials Research Society (EMRS) Conference: Symposium on Advanced Inorganic Materials and Concepts for Photovoltaics.

引用

页数：5

共 21 条

[1] Cu2Zn1-xCdxSn(Se1-ySy)4 solid solutions as absorber materials for solar cells [J].