Molecular beam epitaxy growth of nonmagnetic Weyl semimetal LaAlGe thin film

被引：9

作者：

Bhattarai, Niraj ^{[1
,2
]}

Forbes, Andrew W. ^{[1
,2
]}

Dulal, Rajendra P. ^{[3
]}

Pegg, Ian L. ^{[1
,2
]}

Philip, John ^{[1
,2
]}

机构：

[1] Catholic Univ Amer, Dept Phys, Washington, DC 20064 USA

[2] Catholic Univ Amer, Vitreous State Lab, Washington, DC 20064 USA

[3] Chapman Univ, Inst Quantum Phys, Adv Phys Lab, Burtonsville, MD 20866 USA

来源：

MRS COMMUNICATIONS | 2020年 / 10卷 / 02期

关键词：

Germanium alloys - Topography - Lanthanum compounds - Aluminum compounds - Molecular beams - Film growth - Crystal structure - Phonons - Thin films;

D O I：

10.1557/mrc.2020.28

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Here, the authors report a detailed method of growing LaAlGe, a nonmagnetic Weyl semimetal, thin film on silicon(100) substrates by molecular beam epitaxy and their structural and electrical characterizations. About 50-nm-thick LaAlGe films were deposited and annealed for 16 h in situ at a temperature of 793 K. As-grown high-quality films showed uniform surface topography and near ideal stoichiometry with a body-centered tetragonal crystal structure. Temperature-dependent longitudinal resistivity can be understood with dominant interband s-d electron-phonon scattering in the temperature range of 5-40 K. Hall measurements confirmed the semimetallic nature of the films with an electron-dominated charge carrier density of similar to 7.15 x 10(21) cm(-3) at 5 K.

引用

页码：272 / 277

页数：6

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