New insights into charging in capacitive RF MEMS switches

被引:13
作者
Czarnecki, P. [1 ,2 ]
Rottenberg, X. [1 ,2 ]
Soussan, P. [1 ]
Nolmans, P. [1 ]
Ekkels, P. [1 ,2 ]
Muller, P. [1 ]
Tilmans, H. A. C. [1 ]
De Raedt, W. [1 ]
Puers, R. [2 ]
Marchand, L. [3 ]
De Wolf, I. [1 ,4 ]
机构
[1] IMEC, Kapeldreef 75, B-3001 Louvain, Belgium
[2] Katholieke Univ Leuven, EE Dept, B-3001 Louvain, Belgium
[3] ESA ESTEC, NL-2201 AG Noordwijk, Netherlands
[4] Katholieke Univ Leuven, MTM Dept, B-3001 Louvain, Belgium
来源
2008 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 46TH ANNUAL | 2008年
关键词
reliability; capacitive RF MEMS switch; dielectric charging;
D O I
10.1109/RELPHY.2008.4558936
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper discusses dielectric charging in electrostatic RF-MEMS switches. We show that more than one charging mechanism can be present and impacts their lifetime. These different mechanisms can cancel, mitigate or enhance each other's influence on the lifetime, depending on the materials used and on the test conditions. Contrarily to the common understanding of the dielectric charging, we show that charge trapping in the dielectric interposer is not always the dominant charging mechanism leading to the failure. We finally show that bipolar actuation is not a general remedy for charging in electrostatic RF MEMS switches.
引用
收藏
页码:496 / +
页数:3
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