Bipolar resistive switching with coexistence of mem-elements in the spray deposited CoFe2O4 thin film

被引：33

作者：

Dongale, T. D. ^{[1
]}

Bagade, A. A. ^{[2
]}

Mohite, S. V. ^{[2
]}

Rananavare, A. D. ^{[1
]}

Orlowski, M. K. ^{[3
]}

Kamat, R. K. ^{[4
]}

Rajpure, K. Y. ^{[2
]}

机构：

[1] Shivaji Univ, Sch Nanosci & Biotechnol, Computat Elect & Nanosci Res Lab, Kolhapur 416004, Maharashtra, India

[2] Shivaji Univ, Dept Phys, Electrochem Mat Lab, Kolhapur 416004, Maharashtra, India

[3] Virginia Tech, Bradley Dept Elect & Comp Engn, Blacksburg, VA 24061 USA

[4] Shivaji Univ, Dept Elect, Kolhapur 416004, Maharashtra, India

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2018年 / 29卷 / 04期

关键词：

DEVICE; MEMRISTORS;

D O I：

10.1007/s10854-017-8258-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In the present investigation, we have experimentally demonstrated the bipolar resistive switching with the coexistence of three fundamental memelements in the Ag/CoFe2O4/FTO thin film metal-insulator-metal (MIM) device. The device shows the analog resistive switching behavior and charge transport follows the Ohmic and space charge limited conduction (SCLC) mechanisms. The device transforms from asymmetric to symmetric resistive switching when the SCLC conduction mechanism change to the Ohmic conduction mechanism at higher voltage sweep rates. It was observed that the I-V crossing location of MIM device shifted towards the higher voltage range with increasing voltage sweep rates for both bias regions due to the nanobattery effect. The significant tunneling gap between immature conductive filament(s) and percolation channels was responsible for the coexistence of memelements and nanobattery effect in the Ag/CoFe2O4/FTO thin film MIM device.

引用

页码：3231 / 3238

页数：8

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