A generic approach for embedded catalyst-supported vertically aligned nanowire growth

被引:21
作者
Chung, Hee-Suk [1 ]
Jung, Yeonwoong [1 ]
Zimmerman, Tyler Jacob [1 ]
Lee, Se-Ho [1 ]
Kim, Ji Woo [2 ]
Lee, Sang Hoon [2 ]
Kim, Seul Cham [2 ]
Oh, Kyu Hwan [2 ]
Agarwal, Ritesh [1 ]
机构
[1] Univ Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA
[2] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151742, South Korea
关键词
D O I
10.1021/nl0734037
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We demonstrate a general approach for growing vertically aligned, single-crystalline nanowires of any material on arbitrary substrates by using plasma-sputtered Au/Pd thin films as a catalyst through the vapor-liquid-solid process. The high-energy sputtered Au/Pd atoms form a reactive interface with the substrate forming nanoclusters which get embedded in the substrate, thus providing mechanical stability for vertically aligned nanowire growth. We demonstrate that our approach for vertically aligned nanowire growth is generic and can be extended to various complex substrates such as conducting indium tin oxide.
引用
收藏
页码:1328 / 1334
页数:7
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