Indium induced band gap tailoring in AgGa1-xInxS2 chalcopyrite structure for visible light photocatalysis

被引：56

作者：

Jang, Jum Suk ^{[1
]}

Borse, Pramod H. ^{[1
]}

Lee, Jae Sung ^{[1
]}

Choi, Sun Hee ^{[2
]}

Kim, Hyun Gyu ^{[3
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Chem Engn, Eco Friendly Catalysis & Energy Lab NRL, Pohang 790784, South Korea

[2] POSTECH, Pohang Accelerator Lab, Beamline Res Div, Pohang 790784, South Korea

[3] KBSI, Busan Ctr, Pusan 609735, South Korea

来源：

JOURNAL OF CHEMICAL PHYSICS | 2008年 / 128卷 / 15期

关键词：

D O I：

10.1063/1.2900984

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Indium was substituted at gallium site in chalcopyrite AgGaS2 structure by using a simple solid solution method. The spectroscopic analysis using extended x-ray absorption fine structure and x-ray photoelectron spectroscopy confirmed the indium substitution in AgGaS2 lattice. The band gap energy of AgGa1-xInxS2 (x=0 - 1) estimated from the onset of absorption edge was found to be reduced from 2.67 eV (x=0 ) to 1.9 eV (x=1 ) by indium substitution. The theoretical and experimental studies showed that the indium s orbitals in AgGa1-xInxS2 tailored the band gap energy, thereby modified the photocatalytic activity of the AgGa1-xInxS2. (c) 2008 American Institute of Physics.

引用

页数：6

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