Effect of the microwave oven on structural, morphological and electrical properties of SrBi4Ti4O15 thin films grown on Pt/Ti/SiO2/Si substrates by a soft chemical method

被引：8

作者：

Simoes, A. Z. ^{[1
]}

Ramirez, M. A. ^{[1
]}

Riccardi, C. S. ^{[1
]}

Longo, E. ^{[1
]}

Varela, J. A. ^{[1
]}

机构：

[1] UNESP, Inst Chem, Dept Chem Phys, BR-14801970 Araraquara, SP, Brazil

来源：

MATERIALS CHARACTERIZATION | 2008年 / 59卷 / 06期

基金：

巴西圣保罗研究基金会;

关键词：

thin films; atomic force microscopy; dielectric properties; fatigue;

D O I：

10.1016/j.matchar.2007.05.022

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of SrBi4Ti4O15 (SBTi), a prototype of the Bi-layered-ferroelectric oxide family, were obtained by a soft chemical method and crystallized in a domestic microwave oven. For comparison, films were also crystallized in a conventional method at 700 degrees C for 2 h. Structural and morphological characterization of the SBTi thin films were investigated by Xray diffraction (XRD) and atomic force microscopy (AFM), respectively. Using platinum coated silicon substrates, the ferroelectric properties of the films were determined. Remanent polarization P-r and a coercive field E-c values of 5.1 mu C/cm(2) and 135 kV/cm for the film thermally treated in the microwave oven and 5.4 mu C/cm(2) and 85 kv/cm for the film thermally treated in conventional furnace were found. The films thermally treated in the conventional furnace exhibited excellent fatigue-free characteristics up to 10(10) switching cycles indicating that SBTi thin films are a promising material for use in non-volatile memories. (C) 2007 Elsevier Inc. All rights reserved.

引用

页码：675 / 680

页数：6

共 34 条

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