Influence of N2:(N2+Ar) flow ratio and substrate temperature on the properties of zirconium nitride films prepared by reactive dc magnetron sputtering

被引：20

作者：

Hu, LL ^{[1
]}

Li, DJ ^{[1
]}

Fang, GJ ^{[1
]}

机构：

[1] Tsinghua Univ, Dept Elect Engn, State Key Lab Integrated Optoelectron, Beijing 100084, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2003年 / 220卷 / 1-4期

关键词：

zirconium; nitride; preferred orientation; electrical resistivity; reactive dc sputtering;

D O I：

10.1016/S0169-4332(03)00843-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Preferred crystal orientation and low electrical resistivity are required for ZrNx films applied in electronic devices. In this paper, effects of N-2:(N-2 + Ar) flow ratio (F(N-2)) and substrate temperature on the properties of the films deposited on glass substrate by reactive dc sputtering are investigated. In a wide range of F(N-2) (4-24%), the films show fee NaCl structure. While for F(N-2) in the ranges of 5-12, 12-24 and >24%, the films show (1 1 1)/(2 0 0), (1 1 1) only and amorphous structures, respectively. The electrical resistivity increases with F(N-2) from 5 to 24%, and can be controlled to some extent by changing the substrate temperature. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：367 / 371

页数：5

共 16 条

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