Flexible 2D FETs using hBN dielectrics

被引：0
|
作者：
Petrone, Nicholas [1 ]
Cui, Xu [1 ]
Hone, James [1 ]
Chari, Tarun [2 ]
Shepard, Kenneth [2 ]
机构：
[1] Columbia Univ, Dept MECE, New York, NY 10027 USA
[2] Columbia Univ, Dept EE, New York, NY 10027 USA
来源：
2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2015年
关键词：
FIELD-EFFECT TRANSISTORS; GRAPHENE TRANSISTORS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页数：4
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