Magnetization Peculiarities of Defects in Silicon Produced by Ni+, Co+, Fe+ Ion Implantation

被引：0

作者：

Karabko, Aliaksandra ^{[1
]}

Dostanko, Anatoly ^{[1
]}

Lapchuk, Natalia ^{[2
]}

Onufrievs, Pavels ^{[3
]}

机构：

[1] Belarusian State Univ Informat & Radioelect, P Brovka Str 6, Minsk 220013, BELARUS

[2] Belarusian State Univ, Minsk 220070, BELARUS

[3] Riga Tech Univ, LV-1658 Riga, Latvia

来源：

INTER ACADEMIA 2010: GLOBAL RESEARCH AND EDUCATION | 2011年 / 222卷

关键词：

ion implantation; magnetization; silicon; EPR; Ni; Co; Fe ions;

D O I：

10.4028/www.scientific.net/AMR.222.82

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon p-type (100) wafers implanted with Ni, Co, Fe ions to a dose range of 3.10(13)-3.10(16) cm(-2) have been investigated by means of EPR. The g-factor from dangling bonds of silicon modified by Ni, Co, Fe ion implantation is found to be different from the g-factor of amorphous silicon explained by the change of the local magnetic permeability mu(r). Extreme character of the spin concentration on dose dependence is found, being not typical for silicon.

引用

页码：82 / +

页数：2

共 6 条

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