Electronic, optical properties and effective masses of AlxGa1-xAs and InyGa1-yAs based on the first principle

被引:0
作者
Wang, Congcong [1 ]
Li, Chong [2 ]
Liu, Xuesheng [1 ]
Lan, Tian [1 ]
Zhou, Guangzheng [1 ]
Li, Jing [1 ]
Huang, Rui [1 ]
Li, Ying [1 ]
Wang, Zhiyong [1 ]
机构
[1] Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China
[2] Beijing Univ Technol, Coll Elect Informat & Control Engn, Beijing 100124, Peoples R China
来源
ELEVENTH INTERNATIONAL CONFERENCE ON INFORMATION OPTICS AND PHOTONICS (CIOP 2019) | 2019年 / 11209卷
关键词
First principles; AlxGa1-xAs; InyGa1-yAs; Optical properties; Effective masses;
D O I
10.1117/12.2542227
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The band structure, density of states, optical properties, effective masses and loss function of AlxGa1-xAs and InyGa1-yAs were performed by the first-principles method within the local density approximation. The calculated direct band gap of the AlAs, Al0.5Ga0.5As, GaAs, In0.5Ga0.5As and InAs were 1.608 eV, 1.34eV, 1.02eV, 0.646eV and 0.316eV at G point, which were direct bandgap semiconductor materials. In addition, dielectric functions, the absorption function, refractive index, loss function and effective mass were analyzed in detail. The effective masses of AlxGa1-xAs and InyGa1-yAs were small, so they have high carrier mobility. These results make them to be promising candidates for future electronics.
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页数:8
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