Tunable nonlinear absorption of hydrogenated nanocrystalline silicon

被引：13

作者：

Ma, Y. J. ^{[1
,2
,3
]}

Oh, J. I. ^{[1
,2
,3
,4
]}

Zheng, D. Q. ^{[1
,2
,3
]}

Su, W. A. ^{[1
,2
,3
]}

Shen, W. Z. ^{[1
,2
,3
]}

机构：

[1] Shanghai Jiao Tong Univ, Lab Condensed Matter Spect & Optoelect Phys, Shanghai 200240, Peoples R China

[2] Shanghai Jiao Tong Univ, Key Lab Artificial Struct & Quantum Control, Minist Educ, Dept Phys, Shanghai 200240, Peoples R China

[3] Shanghai Jiao Tong Univ, Inst Solar Energy, Shanghai 200240, Peoples R China

[4] Boston Coll, Dept Phys, Chestnut Hill, MA 02467 USA

来源：

OPTICS LETTERS | 2011年 / 36卷 / 17期

基金：

中国国家自然科学基金;

关键词：

OPTICAL NONLINEARITIES; SATURABLE ABSORPTION; AMORPHOUS-SILICON; PHOTONICS;

D O I：

10.1364/OL.36.003431

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Nonlinear absorption (NLA) of hydrogenated nanocrystalline silicon (nc-Si:H) has been investigated through the open aperture Z-scan method for the photon energy of the incident irradiance slightly less than the bandgap of the sample. NLA responses have been observed to be highly sensitive to the wavelength and intensity of the incident irradiance as well as to the bandgap of the sample, indicating greatly tunable NLA of nc-Si:H. The band tail of nc-Si:H appears to play a crucial role in such NLA responses. (C) 2011 Optical Society of America

引用

页码：3431 / 3433

页数：3

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