Phase noise characteristics associated with low-frequency noise in submicron SOI MOSFET feedback oscillator for RF IC's

被引:13
作者
Tseng, YC [1 ]
Huang, WM
Spears, E
Spooner, D
Ngo, D
Ford, JM
Woo, JCS
机构
[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
[2] Motorola Inc, Wireless Subscriber Syst Grp, Mesa, AZ 85202 USA
关键词
phase noise; silicon-on-insulator;
D O I
10.1109/55.737572
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Phase noise in silicon-on-insulator (SOI) MOSFET feedback oscillators for RF IC applications is investigated, The observed correlation between the oscillator's high frequency phase noise and the transistor's low-frequency noise characteristics demonstrates that the phase noise overshoot still exists in partially-depleted (PD) floating body SOI nMOS Colpitts oscillators. These results suggest that kink-induced effects associated with low-frequency components of the signal are upconverted into the ideally kink-free high frequency domain operation mode of Po Boating body SOI oscillators.
引用
收藏
页码:54 / 56
页数:3
相关论文
共 10 条
[1]  
BUIRGHARTZ JN, P 1996 BIPOLAR BICMO, P138
[2]  
COLINGE JP, 1991, SILICON INSULATOR
[3]  
FELGENTREFF T, 1995, MTT S, P947
[4]  
*HEWL PACK, 11729B1 HEWL PACK
[5]   Integrated circuit technology options for RFIC's - Present status and future directions [J].
Larson, LE .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1998, 33 (03) :387-399
[6]   A SIMPLE MODEL OF FEEDBACK OSCILLATOR NOISE SPECTRUM [J].
LEESON, DB .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (02) :329-&
[7]  
REDMANWHITE W, 1996, P IEEE INT SOI C OCT, P6
[8]   Empirical correlation between AC kink and low-frequency noise overshoot in SOI MOSFET's [J].
Tseng, YC ;
Huang, WLM ;
Welch, PJ ;
Ford, JM ;
Woo, JCS .
IEEE ELECTRON DEVICE LETTERS, 1998, 19 (05) :157-159
[9]  
TSENG YC, 1998, S VLSI TECHN, P112
[10]  
Viviani A, 1995, INTERNATIONAL ELECTRON DEVICES MEETING, 1995 - IEDM TECHNICAL DIGEST, P713, DOI 10.1109/IEDM.1995.499318