Effects of ALD HfO2 thickness on charge trapping and mobility

被引：55
作者：
Sim, JH
Song, SC
Kirsch, PD
Young, CD
Choi, R
Kwong, DL
Lee, BH
Bersuker, G
机构：
[1] SEMATECH, Austin, TX 78741 USA
[2] Univ Texas, Austin, TX USA
来源：
MICROELECTRONIC ENGINEERING | 2005年 / 80卷
关键词：
charge trapping; mobility; high-k;
D O I：
10.1016/j.mee.2005.04.071
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of HfO2 thickness on charge trapping and mobility were investigated. The impact of fast transient electron trapping on DC measurements results in underestimating channel carrier mobility. Scaling the physical thickness of the HfO2 dielectric causes less charge trapping and higher mobility. A HfO2-based high-k solution requires fine-tuning the thickness of the high-k film to maintain a balance between electron trapping in thicker films and increased leakage current in thinner films.
引用
收藏
页码：218 / 221
页数：4
相关论文
共 50 条
  • [21] Improving channel carrier mobility and immunity to charge trapping of high-K NMOSFET by using stacked Y2O3/HfO2 gate dielectric
    Zhu, F
    Rhee, SJ
    Kang, CY
    Choi, CH
    Akbar, MS
    Krishnan, SA
    Zhang, MH
    Kim, HS
    Lee, T
    Ok, I
    Lee, JC
    IEEE ELECTRON DEVICE LETTERS, 2005, 26 (12) : 876 - 878
  • [22] Enhanced Operation in Charge-Trapping Nonvolatile Memory Device With Si3N4/Al2O3/HfO2 Charge-Trapping Layer
    Ye, Zong-Hao
    Chang-Liao, Kuei-Shu
    Tsai, Cheng-Yu
    Tsai, Tzu-Ting
    Wang, Tien-Ko
    IEEE ELECTRON DEVICE LETTERS, 2012, 33 (10) : 1351 - 1353
  • [23] Mobility Anisotropy in Black Phosphorus MOSFETs With HfO2 Gate Dielectrics
    Haratipour, Nazila
    Liu, Yue
    Wu, Ryan J.
    Namgung, Seon
    Ruden, P. Paul
    Mkhoyan, K. Andre
    Oh, Sang-Hyun
    Koester, Steven J.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (10) : 4093 - 4101
  • [24] Mobility enhancement in surface channel SiGePMOSFETs with HfO2 gate dielectrics
    Shi, ZH
    Onsongo, D
    Onishi, K
    Lee, JC
    Banerjee, SK
    IEEE ELECTRON DEVICE LETTERS, 2003, 24 (01) : 34 - 36
  • [25] Differences between charge trapping states in irradiated nano-crystalline HfO2 and non-crystalline Hf silicates
    Lucovsky, G.
    Fleetwood, D. M.
    Lee, S.
    Seo, H.
    Schrimpf, R. D.
    Felix, J. A.
    Luning, J.
    Fleming, L. B.
    Ulrich, M.
    Aspnes, D. E.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2006, 53 (06) : 3644 - 3648
  • [26] Study of charge trapping/detrapping mechanism in SiO2/HfO2 stack gate dielectrics considering two-way detrapping
    Shahil, K. M. Farhan
    Arafat, Md. Nayeem
    Kbosru, Q. D. M.
    Khan, M. Rezwan
    2007 INTERNATIONAL WORKSHOP ON ELECTRON DEVICES AND SEMICONDUCTOR TECHNOLOGY, 2007, : 117 - +
  • [27] High mobility HfO2 n- and p-channel transistors
    Campbell, SA
    Ma, TZ
    Smith, R
    Gladfelter, WL
    Chen, F
    MICROELECTRONIC ENGINEERING, 2001, 59 (1-4) : 361 - 365
  • [28] Effects of Charge Trapping on Memory Characteristics for HfO2-Based Ferroelectric Field Effect Transistors
    Wang, Jianjian
    Bi, Jinshun
    Xu, Yannan
    Niu, Gang
    Liu, Mengxin
    Stempitsky, Viktor
    NANOMATERIALS, 2023, 13 (04)
  • [29] Dielectric Relaxation and Charge Trapping Characteristics Study in Germanium Based MOS Devices With HfO2/Dy2O3 Gate Stacks
    Rahman, Md. Shahinur
    Evangelou, Evangelos K.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (10) : 3549 - 3558
  • [30] Effect of thermal annealing sequence on the crystal phase of HfO2 and charge trap property of Al2O3/HfO2/SiO2 stacks
    Na, Heedo
    Jeong, Juyoung
    Lee, Jimin
    Shin, Hyunsu
    Lee, Sunghoon
    Sohn, Hyunchul
    CURRENT APPLIED PHYSICS, 2017, 17 (10) : 1361 - 1366
12345