Effects of ALD HfO2 thickness on charge trapping and mobility

被引：56

作者：

Sim, JH

Song, SC

Kirsch, PD

Young, CD

Choi, R

Kwong, DL

Lee, BH

Bersuker, G

机构：

[1] SEMATECH, Austin, TX 78741 USA

[2] Univ Texas, Austin, TX USA

来源：

MICROELECTRONIC ENGINEERING | 2005年 / 80卷

关键词：

charge trapping; mobility; high-k;

D O I：

10.1016/j.mee.2005.04.071

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of HfO2 thickness on charge trapping and mobility were investigated. The impact of fast transient electron trapping on DC measurements results in underestimating channel carrier mobility. Scaling the physical thickness of the HfO2 dielectric causes less charge trapping and higher mobility. A HfO2-based high-k solution requires fine-tuning the thickness of the high-k film to maintain a balance between electron trapping in thicker films and increased leakage current in thinner films.

引用

页码：218 / 221

页数：4

共 15 条

[1] Mobility evaluation in high-k devices [J].

Bersuker, G ;

Zeitzoff, P ;

Sim, JH ;

Lee, BH ;

Choi, R ;

Brown, G ;

Young, CD .

2004 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT, 2004, :141-144

[2] Interfacial layer-induced mobility degradation in high-k transistors [J].

Bersuker, G ;

Barnett, J ;

Moumen, N ;

Foran, B ;

Young, CD ;

Lysaght, P ;

Peterson, J ;

Lee, BH ;

Zeitzoff, PM ;

Huff, HR .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (11B) :7899-7902

[3]

BERSUKER G, 2004, P IRPS, P691

[4]

Byoung Hun Lee, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), P133, DOI 10.1109/IEDM.1999.823863

[5]

Gusev E.P., 2001, IEDM Tech. Dig, P451, DOI [DOI 10.1109/IEDM.2001.979537, 10.1109/IEDM.2001.979537]

[6] Characterization of the VT-instability in SiO2/HfO2 gate dielectrics [J].

Kerber, A ;

Cartier, E ;

Pantisano, L ;

Rosmeulen, M ;

Degraeve, R ;

Kauerauf, T ;

Groeseneken, G ;

Maes, HE ;

Schwalke, U .

41ST ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2003, :41-45

[7] Intrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE) [J].

Lee, BH ;

Young, CD ;

Choi, R ;

Sim, JH ;

Bersuker, G ;

Kang, CY ;

Harris, R ;

Brown, GA ;

Matthews, K ;

Song, SC ;

Moumen, N ;

Barnett, J ;

Lysaght, P ;

Choi, KS ;

Wen, HC ;

Huffman, C ;

Alshareef, H ;

Majhi, P ;

Gopalan, S ;

Peterson, J ;

Kirsh, P ;

Li, HJ ;

Gutt, J ;

Gardner, M ;

Huff, HF ;

Zeitzoff, P ;

Murto, RW ;

Larson, L ;

Ramiller, C .

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, :859-862

[8] Localized transient charging and it's implication on the hot carrier reliability of HfSiON MOSFETs [J].

Lee, BH ;

Sim, JH ;

Choi, R ;

Bersuker, G ;

Matthew, K ;

Moumen, N .

2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 2004, :691-692

[9] Characterization and modeling of hysteresis phenomena in high K dielectrics [J].

Leroux, C ;

Mitard, J ;

Ghibaudo, G ;

Garros, X ;

Reimbold, G ;

Guillaumot, B ;

Martin, F .

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, :737-740

[10]

Pantisano L, 2003, VLSI S, P163

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