RF circuit performance degradation due to soft breakdown and hot-carrier effect in deep-submicrometer CMOS technology

被引：47

作者：

Li, Q ^{[1
]}

Zhang, JL

Li, W

Yuan, JS

Chen, Y

Oates, AS

机构：

[1] Univ Cent Florida, Sch Elect Engn & Comp Sci, Chip Design & Reliabil Lab, Orlando, FL 32816 USA

[2] Agere Syst, Very Large Scale Integrat Technol Dev, Orlando, FL USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2001年 / 49卷 / 09期

关键词：

CMOS; constant voltage stress; hot carriers; low-noise amplifier; power amplifier; scattering parameters; soft breakdown;

D O I：

10.1109/22.942565

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A systematic study of RF circuit performance degradation subject to oxide soft breakdown (SBD) and hot-carrier (HC) stress is presented in this paper. DC and RE characteristics before and after stress are extracted from the experimental data. The effects of SBD and HC stress on s-parameters, cutoff frequency, third-order interception point, and noise parameters are examined. The performance drifts of gain, noise figure, linearity, and input matching of the RF low-noise amplifier are demonstrated by SpectreRF simulation results based on measured device data.

引用

页码：1546 / 1551

页数：6

共 11 条

[1] Observation of oxide breakdown and its effects on the characteristics of ultra-thin-oxide nMOSFET's [J].

Henson, WK ;

Yang, N ;

Wortman, JJ .

IEEE ELECTRON DEVICE LETTERS, 1999, 20 (12) :605-607

[2] HOT-ELECTRON-INDUCED MOSFET DEGRADATION - MODEL, MONITOR, AND IMPROVEMENT [J].

HU, CM ;

TAM, SC ;

HSU, FC ;

KO, PK ;

CHAN, TY ;

TERRILL, KW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) :375-385

[3]

KAMAKURA Y, 1997, P IEDM, P81

[4]

LI Q, 2000, IEEE 43 MIDW S CRIC

[5] Microwave CMOS - Device physics and design [J].

Manku, T .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1999, 34 (03) :277-285

[6]

OHGURO T, 1998, P IEDM DEC, P923

[7] RF performance degradation in nMOS transistors due to hot carrier effects [J].

Park, JT ;

Lee, BJ ;

Kim, DW ;

Yu, CG ;

Yu, HK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (05) :1068-1072

[8]

Rafla RA, 1999, ISCAS '99: PROCEEDINGS OF THE 1999 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL 2, P440, DOI 10.1109/ISCAS.1999.780759

[9] THEORY OF NOISY FOURPOLES [J].

ROTHE, H ;

DAHLKE, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1956, 44 (06) :811-818

[10] A 1.5-V, 1.5-GHz CMOS low noise amplifier [J].

Shaeffer, DK ;

Lee, TH .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1997, 32 (05) :745-759

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