Atomistic origin of lattice softness and its impact on structural and carrier dynamics in three dimensional perovskites

被引:59
作者
Guo, Zhendong [1 ]
Wang, Jing [1 ]
Yin, Wan-Jian [1 ,2 ]
机构
[1] Soochow Univ, Coll Energy, Soochow Inst Energy & Mat Innovat SIEMIS, Jiangsu Prov Key Lab Adv Carbon Mat & Wearable En, Suzhou 215006, Peoples R China
[2] Soochow Univ, Light Ind Inst Electrochem Power Source, Suzhou 215006, Peoples R China
基金
中国国家自然科学基金;
关键词
LEAD HALIDE PEROVSKITES; TOTAL-ENERGY CALCULATIONS; SOLAR-CELLS; IODIDE PEROVSKITES; ELECTRONIC-STRUCTURE; MOLECULAR-DYNAMICS; STRAIN RELAXATION; PYXAID PROGRAM; METHYLAMMONIUM; RECOMBINATION;
D O I
10.1039/d1ee02131a
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The soft lattices of lead-halide perovskites (LHPs) are responsible for their unique material properties, including polaron formation, defect tolerance, anharmonic vibration, and large electrostrictive response, which result in exotic carrier dynamics and facilitate strain engineering for elevated efficiency and stability. However, the atomistic origin of lattice softness and its impacts on structural and carrier dynamics remain debatable. Based on an ionic interpretation, we discover a straightforward model that the lattice softness of perovskites ABX(3) is mainly dependent on the steric size and valency of their compositional elements (particularly B and X), whereas the previously assumed principal causes-organic molecular rotation, s-p antibonding coupling, and [BX6] octahedral tilt-play auxiliary or secondary roles. The direct correlations between ionic size/valency, lattice softness, structure disorder, and carrier dynamics are comprehensively investigated by first-principles calculations, thus determining the origin of the anomalous temperature-dependent carrier recombination rate in LHPs. Our work manifests a clear answer to the current debates on the soft lattice of LHPs, rationalizes diverse experiments from compositional management (i.e., A-site and B-site mixing) to strain engineering within a clear model, and provides insightful guidance for device engineering and material design for novel optoelectronic applications.
引用
收藏
页码:660 / 671
页数:12
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