A spintronic source of circularly polarized single photons

被引：25

作者：

Asshoff, Pablo ^{[1
]}

Merz, Andreas

Kalt, Heinz

Hetterich, Michael

机构：

[1] Karlsruhe Inst Technol, Inst Angew Phys, D-76131 Karlsruhe, Germany

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 11期

关键词：

MAGNETIC SEMICONDUCTORS;

D O I：

10.1063/1.3564893

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a spintronic single photon source which emits circularly polarized light, where the helicity is determined by an applied magnetic field. Photons are emitted from an InGaAs quantum dot inside an electrically operated spin light-emitting diode, which comprises the diluted magnetic semiconductor ZnMnSe. The circular polarization degree of the emitted light is high, reaching 83% at an applied magnetic field of 2 T and 96% at 6 T. Autocorrelation traces recorded in pulsed operation mode prove the emitted light to be antibunched. The two circular polarization states could be used for representing quantum states vertical bar 0 > and vertical bar 1 > in quantum cryptography implementations. (C) 2011 American Institute of Physics. [doi:10.1063/1.3564893]

引用

页数：3

共 11 条

[1] Spin-polarization dynamics in InGaAs quantum dots during pulsed electrical spin-injection [J].

Asshoff, Pablo ;

Loeffler, Wolfgang ;

Zimmer, Jochen ;

Fueser, Heiko ;

Fluegge, Harald ;

Kalt, Heinz ;

Hetterich, Michael .

APPLIED PHYSICS LETTERS, 2009, 95 (20)

[2]

Becker W., 2005, ADV TIME CORRELATED

[3] Magnetic semiconductors and half-metals [J].

Coey, JMD ;

Sanvito, S .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2004, 37 (07) :988-993

[4] DILUTED MAGNETIC SEMICONDUCTORS [J].

FURDYNA, JK .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (04) :R29-R64

[5] Electrical spin injection into InGa(N)As quantum structures and single InGaAs quantum dots [J].

Hetterich, M. ;

Loeffler, W. ;

Fallert, J. ;

Hoepcke, N. ;

Burger, H. ;

Passow, T. ;

Li, S. ;

Daniel, B. ;

Ramadout, B. ;

Lupaca-Schomber, J. ;

Hetterich, J. ;

Litvinov, D. ;

Gerthsen, D. ;

Klingshirn, C. ;

Kalt, H. .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2006, 243 (14) :3812-3824

[6] Electrical spin injection from ZnMnSe into InGaAs quantum wells and quantum dots [J].

Löffler, W ;

Tröndle, D ;

Fallert, J ;

Kalt, H ;

Litvinov, D ;

Gerthsen, D ;

Lupaca-Schomber, J ;

Passow, T ;

Daniel, B ;

Kvietkova, J ;

Grün, M ;

Klingshim, C ;

Hetterich, M .

APPLIED PHYSICS LETTERS, 2006, 88 (06)

[7] Ferromagnetic semiconductors: moving beyond (Ga, Mn)As [J].

Macdonald, AH ;

Schiffer, P ;

Samarth, N .

NATURE MATERIALS, 2005, 4 (03) :195-202

[8] Systematic investigation into the influence of growth conditions on InAs/GaAs quantum dot properties [J].

Passow, T. ;

Li, S. ;

Feinaeugle, P. ;

Vallaitis, T. ;

Leuthold, J. ;

Litvinov, D. ;

Gerthsen, D. ;

Hetterich, M. .

JOURNAL OF APPLIED PHYSICS, 2007, 102 (07)

[9] Quantum interference of electrically generated single photons from a quantum dot [J].

Patel, Raj B. ;

Bennett, Anthony J. ;

Cooper, Ken ;

Atkinson, Paola ;

Nicoll, Christine A. ;

Ritchie, David A. ;

Shields, Andrew J. .

NANOTECHNOLOGY, 2010, 21 (27)

[10] Epitaxial integration of the highly spin-polarized ferromagnetic semiconductor EuO with silicon and GaN [J].

Schmehl, Andreas ;

Vaithyanathan, Venu ;

Herrnberger, Alexander ;

Thiel, Stefan ;

Richter, Christoph ;

Liberati, Marco ;

Heeg, Tassilo ;

Roeckerath, Martin ;

Kourkoutis, Lena Fitting ;

Muehlbauer, Sebastian ;

Boeni, Peter ;

Muller, David A. ;

Barash, Yuri ;

Schubert, Juergen ;

Idzerda, Yves ;

Mannhart, Jochen ;

Schlom, Darrell G. .

NATURE MATERIALS, 2007, 6 (11) :882-887

← 1 2 →