Stress migration and the mechanical properties of copper

被引：16

作者：

Alers, GB ^{[1
]}

Sukamto, J ^{[1
]}

Woytowitz, P ^{[1
]}

Lu, X ^{[1
]}

Kailasam, S ^{[1
]}

Reid, J ^{[1
]}

机构：

[1] Novellus Syst, San Jose, CA USA

来源：

2005 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 43RD ANNUAL | 2005年

关键词：

D O I：

10.1109/RELPHY.2005.1493058

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Variations in the mechanical properties of copper related to plating chemistry and copper thickness are found to control stress migration performance in dual damascene copper interconnects. These observations cannot be explained by vacancy diffusion alone. Instead, the high tensile stress of the copper and elastic vs. plastic energy dissipation needs to be considered to account for the degradation in stress migration.

引用

页码：36 / 40

页数：5

共 14 条

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