Ionizing radiation tolerance of stacked Si3N4-SiO2 gate insulators for power MOSFETs

被引：11

作者：

Muthuseenu, K. ^{[1
]}

Barnaby, H. J. ^{[1
]}

Patadia, A. ^{[1
]}

Holbert, K. ^{[1
]}

Privat, A. ^{[1
]}

机构：

[1] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA

来源：

MICROELECTRONICS RELIABILITY | 2020年 / 104卷

关键词：

Ionizing dose; Radiation hardening; Gate oxides; High-k dielectrics; Nitride; Interface trap; Hydrogen passivation; Heiman model; Power MOSFET; OXIDE TRAPS; INTERFACE TRAPS; SILICON-NITRIDE; CHARGE; TRANSPORT; ELECTRON;

D O I：

10.1016/j.microrel.2019.113554

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The total ionizing dose radiation response of metal-nitride-oxide-semiconductor capacitors are examined. Capacitors with different oxide and nitride thickness combinations are fabricated and irradiated using a Co-60 gamma source. Electrical characterization showed all samples with oxide/nitride stack gate insulators exhibited significantly higher tolerance to irradiation when compared to metal-oxide-semiconductor capacitors. Thick oxide-nitride layers can be used as gate insulators in power metal-oxide-semiconductor field effect transistors. Technology computer-aided design simulations are performed to characterize the radiation effects mechanisms. Spatially distributed interface traps at shallow energy level were present in all the oxide/nitride stacks. These interface traps decrease as total dose increases. This result may be due to radiation induced hydrogen passivation.

引用

页数：6

共 27 条

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