Random Telegraph Signal noise SPICE modeling for circuit simulators

被引：9

作者：

Leyris, C. ^{[1
]}

Pilorget, S. ^{[1
]}

Marin, M. ^{[1
]}

Minondo, M. ^{[1
]}

Jaouen, H. ^{[1
]}

机构：

[1] STMicroelect, FTM Crolles Site, F-38926 Crollex, France

来源：

ESSDERC 2007: PROCEEDINGS OF THE 37TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2007年

关键词：

D O I：

10.1109/ESSDERC.2007.4430910

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In small area MOSFET devices widely used in analog and RF circuit design, low frequency noise behavior is increasingly dominated by Random Telegraph Signal noise. For analog circuit designers, awareness of these single electron noise phenomena is crucial. If optimal circuits are to be designed these effects can aid in low noise circuit design if used properly, while they may be detrimental to performance if inadvertently applied. This paper presents the investigation of Random Telegraph Signal (RTS) implementation in circuit simulator. A model based on Shockley-Read-Hall statistics to explain the behavior is presented. This work takes into account the impact of noise power spectral density (PSD) dispersion. The distinctiveness of the noise variations is discussed in detail and the proposed mechanisms behind the phenomena are viewed in light of the collected data. Results are compared with experimental data.

引用

页码：187 / 190

页数：4

共 17 条

[1]

Brederlow R., 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), P159, DOI 10.1109/IEDM.1999.823869

[2]

BREDERLOW R, 1999, IEEE P IEDM

[3] MODEL FOR DRAIN CURRENT RTS AMPLITUDE IN SMALL-AREA MOS-TRANSISTORS [J].

BUISSON, ORD ;

GHIBAUDO, G ;

BRINI, J .

SOLID-STATE ELECTRONICS, 1992, 35 (09) :1273-1276

[4]

FORBES L, 2007, ERRORS COMP SENSE AM

[5] 1/F NOISE SOURCES [J].

HOOGE, FN .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (11) :1926-1935

[6] A PHYSICS-BASED MOSFET NOISE MODEL FOR CIRCUIT SIMULATORS [J].

HUNG, KK ;

KO, PK ;

HU, C ;

CHENG, YC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (05) :1323-1333

[7] NOISE IN SOLID-STATE MICROSTRUCTURES - A NEW PERSPECTIVE ON INDIVIDUAL DEFECTS, INTERFACE STATES AND LOW-FREQUENCY (1/F) NOISE [J].

KIRTON, MJ ;

UREN, MJ .

ADVANCES IN PHYSICS, 1989, 38 (04) :367-468

[8] Trap competition inducing RTS noise in saturation range in N-MOSFETs [J].

Leyris, C ;

Hoffmann, A ;

Valenza, M ;

Vildeuil, JC ;

Roy, F .

NOISE IN DEVICES AND CIRCUITS III, 2005, 5844 :41-51

[9]

LEYRIS C, 2007, IN PRESS IISW

[10]

LEYRIS C, 2006, IEEE P ESSCIRC

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