Pressure-induced non-radiative losses in halide perovskite light-emitting diodes

被引：11

作者：

Jung, Young-Kwang ^{[1
]}

Abdulla, Mayami ^{[2
]}

Friend, Richard H. ^{[2
]}

Stranks, Samuel D. ^{[2
,3
]}

Walsh, Aron ^{[4
]}

机构：

[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 03722, South Korea

[2] Univ Cambridge, Cavendish Lab, JJ Thompson Ave, Cambridge CB3 0HE, England

[3] Univ Cambridge, Dept Chem Engn & Biotechnol, Philippa Fawcett Dr, Cambridge CB3 0AS, England

[4] Imperial Coll London, Dept Mat, Exhibit Rd, London SW7 2AZ, England

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2022年 / 10卷 / 35期

基金：

新加坡国家研究基金会; 英国工程与自然科学研究理事会;

关键词：

TOTAL-ENERGY CALCULATIONS; EFFICIENCY; STRAIN; SEMICONDUCTORS; RECOMBINATION; PERFORMANCE; EXCHANGE; IMPACT; CELLS; 3D;

D O I：

10.1039/d2tc01490d

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The control of non-radiative losses in light-emitting diodes (LEDs) based on metal halide perovskites is crucial to improve device efficiency. Recent studies have shown a correlation between lattice strain and electron-hole recombination. To consolidate the concept, we investigate how external pressure (strain) affects the crystal structure, electronic properties, point defect concentration, and luminescence efficiency of CH3NH3PbBr3. Relativistic first-principles calculations reveal enhanced Rashba splitting and Schottky defect disorder under compression, which produce a pronounced decrease in the electroluminescence peak energy and intensity in operating CH3NH3PbBr3 LEDs. The resulting model sheds light on the factors underpinning the intricate strain-property relationships in soft crystalline semiconductors.

引用

页码：12560 / 12568

页数：9

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